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Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV

Casey, H. C., Sell, D. D., Wecht, K. W.·1975·Journal of Applied Physics

Abstract

The absorption coefficient α for GaAs at room temperature was determined in the spectral range from 1.3 to 1.6 eV by transmission measurements for 10⩽α⩽103 cm−1 and by a Kramers−Kronig analysis of the reflectance for α≳103 cm−1. Measurements were made on high−purity n−type samples, n−type samples with free−electron concentrations from 5×1016 to 6.7×1018 cm−3, p−type samples with free−hole concentrations from 1.5×1016 to 1.6×1019 cm−3, and p−type samples heavily doped with the amphoteric impurity Si. These data show that near the direct energy gap Eg the shape of the α−vs−photon−energy curve is strongly dependent on the impurity concentration.

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Metadata

Authors
Casey, H. C., Sell, D. D., & Wecht, K. W.
Venue
Journal of Applied Physics
Published
1975-01-01
Volume
46
Issue
1
Pages
250-257
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W2019654517
Cited by
627
References
1
FWCI
13.07
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV. https://app.cochat.ai/papers/10.1063/1.321330
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Casey, H. C., Sell, D. D., & Wecht, K. W. (1975). Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV. Journal of Applied Physics. https://doi.org/10.1063/1.321330

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