The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Carrier-induced change in refractive index of InP, GaAs and InGaAsP
Abstract
The change in refractive index Delta n produced by injection of free carriers in InP, GaAs, and InGaAsP is theoretically estimated. Bandfilling (Burstein-Moss effect), bandgap shrinkage, and free-carrier absorption (plasma effect) are included. Carrier concentrations of 10/sup 16//cm/sup 3/ to 10/sup 19//cm/sup 3/ and photon energies of 0.8 to 2.0 eV are considered. Predictions for Delta n are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10/sup -2/ are predicted for carrier concentrations of 10/sup 8//cm/sup 3/ suggested that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.>
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Citations
Cites
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Burstein, E. (1954) · Physical Review · doi:10.1103/physrev.93.632 · Cited by 3,983
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Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers
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Theory of the Band Structure of Very Degenerate Semiconductors
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Concentration dependence of the refractive index for n - and p -type GaAs between 1.2 and 1.8 eV
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Cited by
Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures
Gupta, S., Frankel, M. Y., Valdmanis, J. A., Whitaker, J. F., Mourou, G. A., Smith, F. W., & Calawa, A. R. (1991) · Applied Physics Letters · doi:10.1063/1.105729 · Cited by 428
Near-zero-index materials for photonics
Kinsey, N., DeVault, C., Boltasseva, A., & Shalaev, V. M. (2019) · Nature Reviews Materials · doi:10.1038/s41578-019-0133-0 · Cited by 394
Nano-opto-electro-mechanical systems
Midolo, L., Schliesser, A., & Fiore, A. (2018) · Nature Nanotechnology · doi:10.1038/s41565-017-0039-1 · Cited by 276
Efficient low-loss InGaAsP/Si hybrid MOS optical modulator
Han, J.-H., Boeuf, F., Fujikata, J., Takahashi, S., Takagi, S., & Takenaka, M. (2017) · Nature Photonics · doi:10.1038/nphoton.2017.122 · Cited by 235
Monolithic InGaAs Nanowire Array Lasers on Silicon-on-Insulator Operating at Room Temperature
Kim, H., Lee, W.-J., Farrell, A. C., Morales, J. S. D., Senanayake, P., Prikhodko, S. V., Ochalski, T. J., & Huffaker, D. L. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b00384 · Cited by 114
Metadata
- Authors
- Bennett, B. R., Soref, R. A., & Del Alamo, J. A.
- Venue
- IEEE Journal of Quantum Electronics
- Published
- 1990
- Volume
- 26
- Issue
- 1
- Pages
- 113-122
- ISSN
- 0018-9197 (ISSN-L)
- OpenAlex
- W2117918401
- Cited by
- 1,015
- References
- 14
- FWCI
- 9.28
- Type
- journal article
- Language
- en
- Open access
- closed
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- Bennett, B. R., Soref, R. A., & Del Alamo, J. A. (1990). Carrier-induced change in refractive index of InP, GaAs and InGaAsP. IEEE Journal of Quantum Electronics. https://doi.org/10.1109/3.44924
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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