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An Auger analysis of the SiO2-Si interface
Abstract
Auger electron spectroscopy has been used in conjunction with argon ion sputtering in a study of the chemical structure of the interface region between thermally grown SiO2 and the Si substrate. The distorting effects of the electron and ion beams are dealt with in detail, and we show how the beam parameters can be chosen to minimize instrumental artifacts in the Auger spectra and the chemical depth profiles of the SiO2-Si interface. We discuss the SiO2-Si interface in terms of a morphology model which includes a natural interface roughness and inclusions of silicon in the oxide close to the interface. The width of the interface of a 1000-Å oxide grown at 1200 °C in dry O2 on Si (100) is approximately 35 Å.
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Citations
Cited by
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Surface roughness at the Si(100)-SiO2interface
Goodnick, S. M., Ferry, D. K., Wilmsen, C. W., Liliental, Z., Fathy, D., & Krivanek, O. L. (1985) · Physical Review B · doi:10.1103/physrevb.32.8171 · Cited by 580
Metadata
- Authors
- Johannessen, J. S., Spicer, W. E., & Strausser, Y. E.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1976-07-01
- Volume
- 47
- Issue
- 7
- Pages
- 3028-3037
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1996518304
- Cited by
- 261
- References
- 0
- FWCI
- 14.68
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: An Auger analysis of the SiO2-Si interface. https://app.cochat.ai/papers/10.1063/1.323047
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- Johannessen, J. S., Spicer, W. E., & Strausser, Y. E. (1976). An Auger analysis of the SiO2-Si interface. Journal of Applied Physics. https://doi.org/10.1063/1.323047
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