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Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etching
Abstract
The extent to which gas-surface chemical reactions can be enhanced by energetic radiation (primarily ions and electrons) incident on the surface is described. Emphasis is placed on chemical systems which lead to volatile reaction products. In particular, the reactions of Si, SiO2, and Si3N4 with XeF2, F2, and Cl2 are examined experimentally. Possible mechanisms for the radiation-induced enhancement are discussed and some technological implications of this process in plasma etching technology and lithography are considered.
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Citations
Cited by
Bulk micromachining of silicon
Kovacs, G. T. A., Maluf, N. I., & Petersen, K. E. (1998) · Proceedings of the IEEE · doi:10.1109/5.704259 · Cited by 733
Overview of atomic layer etching in the semiconductor industry
Kanarik, K. J., Lill, T., Hudson, E. A., Sriraman, S., Tan, S., Marks, J., Vahedi, V., & Gottscho, R. A. (2015) · Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films · doi:10.1116/1.4913379 · Cited by 623
Energy distribution of bombarding ions in plasma etching of dielectrics
Buzzi, F. L., Ting, Y.-H., & Wendt, A. E. (2009) · Plasma Sources Science and Technology · doi:10.1088/0963-0252/18/2/025009 · Cited by 50
Metadata
- Authors
- Coburn, J. W., & Winters, H. F.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1979-05-01
- Volume
- 50
- Issue
- 5
- Pages
- 3189-3196
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2044924796
- Cited by
- 761
- References
- 0
- FWCI
- 23.44
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etching. https://app.cochat.ai/papers/10.1063/1.326355
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- Coburn, J. W., & Winters, H. F. (1979). Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etching. Journal of Applied Physics. https://doi.org/10.1063/1.326355
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