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Parallel silicide contacts
Abstract
Parallel silicide contacts consisting of PtSi and NiSi with fixed ratios of contact areas were prepared for current-voltage and capacitance-voltage measurements of Schottky barrier height. These measurements were analyzed with models assuming a linear combination of thermionic emission currents or junction capacitances. The measured and the computed values of barrier height have been found to agree very well. A systematic diagnosis of parallel contacts under a variety of conditions is presented in the Appendix.
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Citations
Cited by
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Electron transport at metal-semiconductor interfaces: General theory
Tung, R. T. (1992) · Physical Review B · doi:10.1103/physrevb.45.13509 · Cited by 1,521
The structure and properties of metal-semiconductor interfaces
BRILLSON, L. (1982) · Surface Science Reports · doi:10.1016/0167-5729(82)90001-2 · Cited by 928
Metadata
- Authors
- Ohdomari, I., & Tu, K. N.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1980-07-01
- Volume
- 51
- Issue
- 7
- Pages
- 3735-3739
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2090958407
- Cited by
- 210
- References
- 0
- FWCI
- 4.26
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Parallel silicide contacts. https://app.cochat.ai/papers/10.1063/1.328160
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- Ohdomari, I., & Tu, K. N. (1980). Parallel silicide contacts. Journal of Applied Physics. https://doi.org/10.1063/1.328160
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
