The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Electron transport at metal-semiconductor interfaces: General theory
Abstract
A dipole-layer approach is presented, which leads to analytic solutions to the potential and the electronic transport at metal-semiconductor interfaces with arbitrary Schottky-barrier-height profiles. The presence of inhomogeneities in the Schottky-barrier height is shown to lead to a coherent explanation of many anomalies in the experimental results. These results suggest that the formation mechanism of the Schottky barrier is locally nonuniform at common, polycrystalline, metal-semiconductor interfaces.
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Citations
Cites
Surface States and Rectification at a Metal Semi-Conductor Contact
Bardeen, J. (1947) · Physical Review · doi:10.1103/physrev.71.717 · Cited by 2,188
Rhoderick, E. H. (1982) · IEE Proceedings I Solid State and Electron Devices · doi:10.1049/ip-i-1.1982.0001 · Cited by 1,717
Barrier inhomogeneities at Schottky contacts
Werner, J. H., & Güttler, H. H. (1991) · Journal of Applied Physics · doi:10.1063/1.347243 · Cited by 1,684
Schottky Barrier Heights and the Continuum of Gap States
Tersoff, J. (1984) · Physical Review Letters · doi:10.1103/physrevlett.52.465 · Cited by 1,403
Proceedings of the 17th International Conference on the Physics of Semiconductors
Chadi, J. D., & Harrison, W. A. (1985) · Springer eBooks · doi:10.1007/978-1-4615-7682-2 · Cited by 1,240
The structure and properties of metal-semiconductor interfaces
BRILLSON, L. (1982) · Surface Science Reports · doi:10.1016/0167-5729(82)90001-2 · Cited by 928
Electron transport of inhomogeneous Schottky barriers: A numerical study
Sullivan, J. P., Tung, R. T., Pinto, M. R., & Graham, W. R. M. (1991) · Journal of Applied Physics · doi:10.1063/1.349737 · Cited by 747
Self-citationElectron transport of inhomogeneous Schottky barriers
Tung, R. T. (1991) · Applied Physics Letters · doi:10.1063/1.104747 · Cited by 353
Self-citationReverse current-voltage characteristics of metal-silicide Schottky diodes
Andrews, J. M., & Lepselter, M. P. (1970) · Solid-State Electronics · doi:10.1016/0038-1101(70)90098-5 · Cited by 319
Ohdomari, I., & Tu, K. N. (1980) · Journal of Applied Physics · doi:10.1063/1.328160 · Cited by 210
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Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Strategies for stable water splitting via protected photoelectrodes
Bae, D., Seger, B., Vesborg, P. C. K., Hansen, O., & Chorkendorff, I. (2017) · Chemical Society Reviews · doi:10.1039/c6cs00918b · Cited by 572
Karataş, Ş., Altındal, Ş., Türüt, A., & Özmen, A. (2003) · Applied Surface Science · doi:10.1016/s0169-4332(03)00564-6 · Cited by 258
Novak, N., Keil, P., Frömling, T., Schader, F. H., Martin, A., Webber, K. G., & Rödel, J. (2019) · Acta Materialia · doi:10.1016/j.actamat.2018.10.008 · Cited by 34
Metadata
- Authors
- Tung, R. T.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 1992-06-15
- Volume
- 45
- Issue
- 23
- Pages
- 13509-13523
- ISSN
- 0163-1829 (ISSN-L)
- 1095-3795
- OpenAlex
- W2054985204
- Cited by
- 1,521
- References
- 14
- FWCI
- 9.43
- Type
- journal article
- Language
- en
- Open access
- closed
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Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
