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Electric field enhanced emission from non-Coulombic traps in semiconductors
Abstract
Electric field enhancement of emission from three non-Coulombic traps has been calculated: the shielded Coulombic potential, the polarization potential, and the dipole potential. Both the Poole-Frenkel effect and phonon-assisted tunneling have been included, and both were found to be important. The field effect can be used to distinguish between these potentials on the basis of their long range character. This effect is most important in interpreting the results of capacitance transient studies of deep levels.
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Cited by
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Metadata
- Authors
- Martin, P. A., Streetman, B. G., & Hess, K.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1981-12-01
- Volume
- 52
- Issue
- 12
- Pages
- 7409-7415
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1997643914
- Cited by
- 232
- References
- 0
- FWCI
- 4.59
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Electric field enhanced emission from non-Coulombic traps in semiconductors. https://app.cochat.ai/papers/10.1063/1.328731
- The paper
- Martin, P. A., Streetman, B. G., & Hess, K. (1981). Electric field enhanced emission from non-Coulombic traps in semiconductors. Journal of Applied Physics. https://doi.org/10.1063/1.328731
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
