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Properties of Al x Ga1−x N films prepared by reactive molecular beam epitaxy
Abstract
Single-crystal films of the solid solution AlxGa1−xN of the entire composition range have been fabricated on sapphire and silicon substrates by reactive molecular beam epitaxy (MBE) at 700 °C. The properties of the films have been studied by the reflection high energy electron diffraction technique, x-ray diffraction, and electrical and optical measurements. The lattice constant of the film is not a linear function of the composition, and the fundamental absorption edge also shows nonlinear dependence on the composition. The narrow intense peak of the cathodoluminescence concerned with the band to band or shallow impurity band transition, varies from 3.4 to 6 eV with the composition, which suggests the feasibility of AlxGa1−xN films grown by reactive MBE for optical devices in the ultraviolet spectral region.
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Cites
Anomalous Optical Absorption Limit in InSb
Burstein, E. (1954) · Physical Review · doi:10.1103/physrev.93.632 · Cited by 3,983
The Interpretation of the Properties of Indium Antimonide
Moss, T. S. (1954) · Proceedings of the Physical Society. Section B · doi:10.1088/0370-1301/67/10/306 · Cited by 1,923
Casey, H. C., Panish, M. B., & Roth, T. A. (1979) · Journal of The Electrochemical Society · doi:10.1149/1.2129123 · Cited by 1,716
Bonds and Bands in Semiconductors
(1973) · Elsevier eBooks · doi:10.1016/b978-0-12-553350-8.x5001-5 · Cited by 1,596
Electronic Structures of Semiconductor Alloys
Van Vechten, J. A., & Bergstresser, T. K. (1970) · Physical Review B · doi:10.1103/physrevb.1.3351 · Cited by 705
Epitaxially grown AlN and its optical band gap
Yim, W. M., Stofko, E. J., Zanzucchi, P. J., Pánkové, J. I., Ettenberg, M., & Gilbert, S. L. (1973) · Journal of Applied Physics · doi:10.1063/1.1661876 · Cited by 620
Fundamental absorption edge in GaN, InN and their alloys
Osamura, K., Nakajima, K., Murakami, Y., Shingu, P. H., & Ohtsuki, A. (1972) · Solid State Communications · doi:10.1016/0038-1098(72)90474-7 · Cited by 181
Pánkové, J. I. (1975) · Medical Entomology and Zoology · Cited by 129
III-V alloys for optoelectronic applications
Nuese, C. J. (1977) · Journal of Electronic Materials · doi:10.1007/bf02660488 · Cited by 69
Cited by
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Khan, M. A., Van Hove, J. M., Kuznia, J. N., & Olson, D. T. (1991) · Applied Physics Letters · doi:10.1063/1.104886 · Cited by 182
Metadata
- Authors
- Yoshida, S., Misawa, S., & Gonda, S.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1982-10-01
- Volume
- 53
- Issue
- 10
- Pages
- 6844-6848
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1974307205
- Cited by
- 275
- References
- 9
- FWCI
- 1.62
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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