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Semiconductors for high-voltage, vertical channel field-effect transistors
Abstract
The influence of material parameters upon the characteristics of vertical channel power field effect transistors is examined. It is demonstrated that for devices with the same breakdown voltage and device structure, the on-resistance is inversely proportional to the third power of the energy band gap and inversely proportional to the mobility. In addition the frequency response of these devices increases in proportion to the mobility and the energy band gap. Calculated device parameters for III–V semiconductor compounds, as well as their alloys, have been compared to those of a silicon device with the same breakdown voltage. It is found that devices fabricated from GaAs, InP, and GaP are expected to have a current handling capability which is a factor of 12.7, 5, and 1.85 better than that of the silicon device with the same breakdown voltage. In addition, the current handling capability of devices fabricated from the alloy semiconductors GaAlAs, GaAsP, and InGaP are even superior to those of a GaAs device with the same breakdown voltage.
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Cited by
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., et al. (2018) · Advanced Electronic Materials · doi:10.1002/aelm.201600501 · Cited by 1,602
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Pearton, S. J., Ren, F., Tadjer, M., & Kim, J. (2018) · Journal of Applied Physics · doi:10.1063/1.5062841 · Cited by 659
Gallium nitride devices for power electronic applications
Baliga, B. J. (2013) · Semiconductor Science and Technology · doi:10.1088/0268-1242/28/7/074011 · Cited by 624
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Husain, I., Ozpineci, B., Islam, M. S., Gurpinar, E., Su, G.-J., Yu, W., Chowdhury, S., Xue, L., Rahman, D., & Sahu, R. (2021) · Proceedings of the IEEE · doi:10.1109/jproc.2020.3046112 · Cited by 608
Metadata
- Authors
- Baliga, B. J.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1982-03-01
- Volume
- 53
- Issue
- 3
- Pages
- 1759-1764
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2150108215
- Cited by
- 470
- References
- 0
- FWCI
- 1.08
- Type
- journal article
- Language
- en
- Open access
- closed
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- Baliga, B. J. (1982). Semiconductors for high-voltage, vertical channel field-effect transistors. Journal of Applied Physics. https://doi.org/10.1063/1.331646
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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