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Model for ion-assisted thin-film densification
Abstract
A theoretical model to explain the densification of thin films by ion assistance is described. The model takes advantage of previously developed fast methods for three-dimensional Monte Carlo cascade computations and assumes a low thermal adatom mobility. It is shown that ion incorporation and recoil implantation of surface atoms lead to a film densification slightly below the surface of a growing film and that the density enhancement depends on the ability of vapor atoms to refill surface vacancies which are created by sputtering and driven-in atoms. In particular, the time-dependent mass density profiles evolving during the growth of a 600-eV, oxygen-assisted, vapor-deposited ZrO2 film has been determined and good agreement with experiment is obtained.
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Citations
Cited by
Zhao, Z., Tay, B. K., & Yu, G. (2004) · Applied Optics · doi:10.1364/ao.43.001281 · Cited by 60
Metadata
- Authors
- Müller, K.-H.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1986-04-15
- Volume
- 59
- Issue
- 8
- Pages
- 2803-2807
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2152156750
- Cited by
- 193
- References
- 0
- FWCI
- 19.82
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Model for ion-assisted thin-film densification. https://app.cochat.ai/papers/10.1063/1.336960
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- Müller, K.-H. (1986). Model for ion-assisted thin-film densification. Journal of Applied Physics. https://doi.org/10.1063/1.336960
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
