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Effect of contamination on the electronic structure and hole-injection properties of MoO3/organic semiconductor interfaces
Abstract
The electronic structure and hole-injection properties of ambient contaminated molybdenum trioxide (MoO3) surfaces are studied by ultraviolet and inverse photoemission spectroscopy, and current-voltage measurements. Contamination reduces the work function (WF), electron affinity (EA) and ionization energy by about 1 eV with respect to the freshly evaporated film, to values of 5.7 eV, 5.5 eV, and 8.6 eV, respectively. However, the WF and EA remain sufficiently large that the hole-injection properties of MoO3 are not affected by contamination. The results are of particular importance in view of potential applications of transition metal oxides for low-cost manufacturing of devices in low-vacuum or nonvacuum environment.
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Cited by
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Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications
Meyer, J., Hamwi, S., Kröger, M., Kowalsky, W., Riedl, T., & Kahn, A. (2012) · Advanced Materials · doi:10.1002/adma.201201630 · Cited by 1,248
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Lunt, R. R., & Bulovic, V. (2011) · Applied Physics Letters · doi:10.1063/1.3567516 · Cited by 346
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Metadata
- Authors
- Meyer, J., Shu, A., Kröger, M., & Kahn, A.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2010-03-29
- Volume
- 96
- Issue
- 13
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1987201745
- Cited by
- 196
- References
- 0
- FWCI
- 20.68
- Type
- journal article
- Language
- en
- Open access
- closed
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- Meyer, J., Shu, A., Kröger, M., & Kahn, A. (2010). Effect of contamination on the electronic structure and hole-injection properties of MoO3/organic semiconductor interfaces. Applied Physics Letters. https://doi.org/10.1063/1.3374333
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