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Silicon-to-silicon direct bonding method
Abstract
It was found that strong bonding takes place when a pair of clean, mirror-polished silicon surfaces are contacted at room temperature after hydrophilic surface formation. Bonding strength reaches the fracture strength of silicon bulk after heating above 1000 °C. Electric resistivity at the interface is less than 10−6 Ω/cm2. Bonding p-type silicon to n-type silicon forms a diode. The reaction between silanol groups formed on the surface may cause the bonding force. Heating above 1000 °C was thought to diffuse oxygen to inside the silicon bulk, forming an epitaxial-like lattice continuity at the interface.
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Citations
Cited by
Gösele, U., & Tong, Q.-Y. (1998) · Annual Review of Materials Science · doi:10.1146/annurev.matsci.28.1.215 · Cited by 599
Emerging heterogeneous integrated photonic platforms on silicon
Fathpour, S. (2014) · Nanophotonics · doi:10.1515/nanoph-2014-0024 · Cited by 74
Metadata
- Authors
- Shimbo, M., Furukawa, K., Fukuda, K., & Tanzawa, K.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1986-10-15
- Volume
- 60
- Issue
- 8
- Pages
- 2987-2989
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2086942685
- Cited by
- 510
- References
- 0
- FWCI
- 8.87
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Silicon-to-silicon direct bonding method. https://app.cochat.ai/papers/10.1063/1.337750
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- Shimbo, M., Furukawa, K., Fukuda, K., & Tanzawa, K. (1986). Silicon-to-silicon direct bonding method. Journal of Applied Physics. https://doi.org/10.1063/1.337750
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
