The DOI matches its Crossref record; 26 of the 26 references it cites were found in a registry or an index.
SEMICONDUCTOR WAFER BONDING
Abstract
▪ Abstract When mirror-polished, flat, and clean wafers of almost any material are brought into contact at room temperature, they are locally attracted to each other by van der Waals forces and adhere or bond. This phenomenon is referred to as wafer bonding. The most prominent applications of wafer bonding are silicon-on-insulator (SOI) devices, silicon-based sensors and actuators, as well as optical devices. The basics of wafer-bonding technology are described, including microcleanroom approaches, prevention of interface bubbles, bonding of III-V compounds, low-temperature bonding, ultra-high vacuum bonding, thinning methods such as smart-cut procedures, and twist wafer bonding for compliant substrates. Wafer bonding allows a new degree of freedom in design and fabrication of material combinations that previously would have been excluded because these material combinations cannot be realized by the conventional approach of epitaxial growth.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Intermolecular and Surface Forces
(2011) · Intermolecular and Surface Forces · doi:10.1016/b978-0-12-391927-4.10024-6 · Cited by 16,923
Defects in epitaxial multilayers I. Misfit dislocations
Matthews, J. (1974) · Journal of Crystal Growth · doi:10.1016/0022-0248(74)90424-2 · Cited by 3,102
Silicon on insulator material technology
Bruel, M. (1995) · Electronics Letters · doi:10.1049/el:19950805 · Cited by 1,019
The effect of surface roughness on the adhesion of elastic solids
Fuller, K. N. G., & Tabor, D. (1975) · Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences · doi:10.1098/rspa.1975.0138 · Cited by 976
Bonding of silicon wafers for silicon-on-insulator
Maszara, W. P., Goetz, G., Caviglia, A., & McKitterick, J. B. (1988) · Journal of Applied Physics · doi:10.1063/1.342443 · Cited by 875
Intermolecular and Surface Forces
(2011) · doi:10.1016/c2009-0-21560-1 · Cited by 871
Extreme selectivity in the lift-off of epitaxial GaAs films
Yablonovitch, E., Gmitter, T., Harbison, J. P., & Bhat, R. (1987) · Applied Physics Letters · doi:10.1063/1.98946 · Cited by 817
Field Assisted Glass-Metal Sealing
Wallis, G., & Pomerantz, D. I. (1969) · Journal of Applied Physics · doi:10.1063/1.1657121 · Cited by 746
Dowson, D. (1979) · Medical Entomology and Zoology · Cited by 678
Silicon-to-silicon direct bonding method
Shimbo, M., Furukawa, K., Fukuda, K., & Tanzawa, K. (1986) · Journal of Applied Physics · doi:10.1063/1.337750 · Cited by 510
Cited by
Niklaus, F., Stemme, G., Lu, J. Q., & Gutmann, R. J. (2006) · Journal of Applied Physics · doi:10.1063/1.2168512 · Cited by 472
Wafer-to-wafer bonding for microstructure formation
Schmidt, M. A. (1998) · Proceedings of the IEEE · doi:10.1109/5.704262 · Cited by 437
Bai, R., Yang, J., & Suo, Z. (2019) · European Journal of Mechanics - A/Solids · doi:10.1016/j.euromechsol.2018.12.001 · Cited by 346
Hybrid Integrated Platforms for Silicon Photonics
Liang, D., Roelkens, G., Baets, R., & Bowers, J. (2010) · Materials · doi:10.3390/ma3031782 · Cited by 316
Adhesion design maps for bio-inspired attachment systems
Spolenak, R., Gorb, S., & Arzt, E. (2005) · Acta Biomaterialia · doi:10.1016/j.actbio.2004.08.004 · Cited by 278
Metadata
- Authors
- Gösele, U., & Tong, Q.-Y.
- Venue
- Annual Review of Materials Science
- Publisher
- Annual Reviews
- Published
- 1998-08
- Volume
- 28
- Issue
- 1
- Pages
- 215-241
- ISSN
- 0084-6600 (ISSN-L)
- OpenAlex
- W2615030411
- Cited by
- 599
- References
- 26
- FWCI
- 27.23
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: SEMICONDUCTOR WAFER BONDING. https://app.cochat.ai/papers/10.1146/annurev.matsci.28.1.215
- The paper
- Gösele, U., & Tong, Q.-Y. (1998). SEMICONDUCTOR WAFER BONDING. Annual Review of Materials Science. https://doi.org/10.1146/annurev.matsci.28.1.215
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
