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Proposal for strained type II superlattice infrared detectors
Abstract
We show that strained type II superlattices made of InAs-Ga1−xInxSb x∼0.4 have favorable optical properties for infrared detection. By adjusting the layer thicknesses and the alloy composition, a wide range of wavelengths can be reached. Optical absorption calculations for a case where λc∼10 μm show that near threshold the absorption is as good as for the HgCdTe alloy with the same band gap. The electron effective mass is nearly isotropic and equal to 0.04 m. This effective mass should give favorable electrical properties, such as small diode tunneling currents and good mobilities and diffusion lengths.
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Citations
Cited by
HgCdTe infrared detector material: history, status and outlook
Rogalski, A. (2005) · Reports on Progress in Physics · doi:10.1088/0034-4885/68/10/r01 · Cited by 1,047
Photogating in Low Dimensional Photodetectors
Fang, H., & Hu, W. (2017) · Advanced Science · doi:10.1002/advs.201700323 · Cited by 986
Theory of semiconductor superlattice electronic structure
Smith, D. L., & Mailhiot, C. (1990) · Reviews of Modern Physics · doi:10.1103/revmodphys.62.173 · Cited by 567
Self-citationWang, J., Fang, H., Wang, X., Chen, X., Lu, W., & Hu, W. (2017) · Small · doi:10.1002/smll.201700894 · Cited by 339
InAs/GaSb type-II superlattice infrared detectors: Future prospect
Rogalski, A., Martyniuk, P., & Kopytko, M. (2017) · Applied Physics Reviews · doi:10.1063/1.4999077 · Cited by 325
Metadata
- Authors
- Smith, D. L., & Mailhiot, C.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1987-09-15
- Volume
- 62
- Issue
- 6
- Pages
- 2545-2548
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1996590924
- Cited by
- 726
- References
- 0
- FWCI
- 6.14
- Type
- journal article
- Language
- en
- Open access
- closed
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