Far-infrared absorption of silicon crystals
Abstract
Far-infrared absorption coefficients of silicon crystals grown by the Czochralski method (CZ) and by the floating-zone method (FZ) in the range of 20–200 cm−1 were obtained from transmission measurements at two different thicknesses, allowing for the effect of the multiple internal reflection. The CZ and FZ specimens used were not intentionally doped and had dc resistivities of 9.4±0.3 Ω cm and (5±2)×104 Ω cm, respectively. The impurity-induced absorption of the CZ crystal is well explained by the Drude model, while the FZ crystal showed only a weak absorption which is attributed to a wing of the intrinsic lattice band of silicon.
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High-resistivity silicon samples are usually modeled using the Drude model.
“Such samples are usually modeled using the Drude model [43].”
From THz-TDS Time-Trace Analysis for the Extraction of Material and Metamaterial Parameters (2019) · cites this paper as [43]
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References 10 · Cited by 55
- Authors
- Ohba, T., & Ikawa, S.-I.
- Affiliations
- Hokkaido University (JP)
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1988-10-15
- Volume
- 64
- Issue
- 8
- Pages
- 4141-4143
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1981277188
- Cited by
- 55
- References
- 10
- Citations by year
- 2025: 2 · 2022: 1 · 2021: 2 · 2020: 2 · 2018: 3 · 2017: 4 · 2016: 3 · 2015: 3 · 2014: 1 · 2013: 3
- FWCI
- 0.90
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Applied Physics (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon and Solar Cell Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Keywords
- far-infrared absorption, silicon crystals, Czochralski crystal growth, floating zone crystal growth, absorption coefficient, multiple internal reflections, Drude model, impurity absorption, electrical resistivity
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