The DOI matches its Crossref record; 24 of the 24 references it cites were found in a registry or an index.
Intrinsic concentration, effective densities of states, and effective mass in silicon
Abstract
An inconsistency between commonly used values of the silicon intrinsic carrier concentration, the effective densities of states in the conduction and valence bands, and the silicon band gap is resolved by critically assessing the relevant literature. As a result of this assessment, experimentally based values for the valence-band ‘‘densities-of-states’’ effective mass are determined in the 300–500 K range and are shown to be in good agreement with recent theoretical calculations. At 300 K, experimentally based values of 3.1×1019 cm−3 for the valence-band effective densities of states and 1.08×1010 cm−3 for the intrinsic carrier concentration are determined. Although in good agreement with theoretical calculations, these are significantly higher and lower, respectively, than commonly used values in the past. These results have important implications in the calculation of other silicon material and device parameters.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Anharmonic effects in light scattering due to optical phonons in silicon
Balkanski, M., Wallis, R. F., & Haro, E. (1983) · Physical Review B · doi:10.1103/physrevb.28.1928 · Cited by 1,679
Cyclotron Resonance of Electrons and Holes in Silicon and Germanium Crystals
Dresselhaus, G., Kip, A. F., & Kittel, C. (1955) · Physical Review · doi:10.1103/physrev.98.368 · Cited by 1,252
A review of some charge transport properties of silicon
Jacoboni, C., Canali, C., Ottaviani, G., & Alberigi Quaranta, A. (1977) · Solid-State Electronics · doi:10.1016/0038-1101(77)90054-5 · Cited by 1,149
Valence-Band Parameters in Cubic Semiconductors
Lawaetz, P. (1971) · Physical Review B · doi:10.1103/physrevb.4.3460 · Cited by 1,110
Electrical Properties of Silicon Containing Arsenic and Boron
Morin, F. J., & Maita, J. P. (1954) · Physical Review · doi:10.1103/physrev.96.28 · Cited by 1,007
Deep impurities in semiconductors
Milnes, A. G. (1973) · International Linear Collider · Cited by 845
Harrison, W. A. (1970) · Medical Entomology and Zoology · Cited by 627
Temperature dependence of the band gap of silicon
Bludau, W., Onton, A., & Heinke, W. (1974) · Journal of Applied Physics · doi:10.1063/1.1663501 · Cited by 578
Hensel, J. C., & Feher, G. (1963) · Physical Review · doi:10.1103/physrev.129.1041 · Cited by 464
Effective mass and intrinsic concentration in silicon
Barber, H. D. (1967) · Solid-State Electronics · doi:10.1016/0038-1101(67)90122-0 · Cited by 344
Cited by
Sendek, A. D., Yang, Q., Cubuk, E. D., Duerloo, K.-A. N., Cui, Y., & Reed, E. J. (2017) · Energy & Environmental Science · doi:10.1039/c6ee02697d · Cited by 448
Aydin, E., Allen, T. G., De Bastiani, M., Xu, L., Ávila, J., Salvador, M., Van Kerschaver, E., & De Wolf, S. (2020) · Nature Energy · doi:10.1038/s41560-020-00687-4 · Cited by 325
Metadata
- Authors
- Green, M. A.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1990-03-15
- Volume
- 67
- Issue
- 6
- Pages
- 2944-2954
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2045228131
- Cited by
- 771
- References
- 24
- FWCI
- 8.40
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Intrinsic concentration, effective densities of states, and effective mass in silicon. https://app.cochat.ai/papers/10.1063/1.345414
- The paper
- Green, M. A. (1990). Intrinsic concentration, effective densities of states, and effective mass in silicon. Journal of Applied Physics. https://doi.org/10.1063/1.345414
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
