Trapping and trap creation studies on nitrided and reoxidized-nitrided silicon dioxide films on silicon
DOI 10.1063/1.350357
Cited by (111)
Items 101–111 of 111
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- Bias temperature instability study on switching defects in SiON and high-K gate dielectricsZ. Y. Tung · 2019
- Electrical PropertiesE.S. Machlin · 2006 · Elsevier eBooks
- TrapsJian Fu Zhang · 1999 · Wiley Encyclopedia of Electrical and Electronics Engineering
- CarbohydratesMichael Green, J. Andrew Doyle · 2009 · CRC Press eBooks
- TrapsJian Fu Zhang · 2014 · Wiley Encyclopedia of Electrical and Electronics Engineering
- Charge Trapping in an Oxide-Nitride-Oxide Gate DielectricRichard B. Klein, Nelson S. Saks, Richard R. Siergiej · 1993 · Springer eBooks
- Reoxidized Nitrided Oxide Gate Dielectrics for Advanced CMOSPeter W. Wyatt, Gregory J. Dunn · 1993 · Springer eBooks