The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
Abstract
In this letter, we study the influence of the Pt top-electrode thickness and of the chamber atmosphere during cell operation on the resistive switching of TiN\HfO2\Pt cells. The oxygen permeability of the Pt electrode directly in contact with the atmosphere significantly affects the resistive switching and the resistance states of the cell. The results provide strong experimental indications that the electroforming operation leads to oxygen-vacancy formation and that the subsequent reset operation relies on the available oxygen species in the filament neighborhood. Significant implications with respect to endurance and retention assessment of resistive-switching memory devices are discussed.
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Cites
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Cited by
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Self-citationLee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
Chen, Y. Y., Goux, L., Clima, S., Govoreanu, B., Degraeve, R., Kar, G. S., Fantini, A., Groeseneken, G., Wouters, D. J., & Jurczak, M. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2241064 · Cited by 271
Self-citationElectric field cycling behavior of ferroelectric hafnium oxide
Schenk, T., Schroeder, U., Pešić, M., Popovici, M., Pershin, Y. V., & Mikolajick, T. (2014) · ACS Applied Materials & Interfaces · doi:10.1021/am504837r · Cited by 197
Chakraborty, I., Ali, M., Ankit, A., Jain, S., Roy, S., Sridharan, S., Agrawal, A., Raghunathan, A., & Roy, K. (2020) · Proceedings of the IEEE · doi:10.1109/jproc.2020.3003007 · Cited by 140
Metadata
- Authors
- Goux, L., Czarnecki, P., Chen, Y. Y., Pantisano, L., Wang, X. P., Degraeve, R., Govoreanu, B., Jurczak, M., Wouters, D. J., & Altimime, L.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2010-12-13
- Volume
- 97
- Issue
- 24
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1993662835
- Cited by
- 232
- References
- 1
- FWCI
- 13.95
- Type
- journal article
- Language
- en
- Open access
- closed
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- Goux, L., Czarnecki, P., Chen, Y. Y., Pantisano, L., Wang, X. P., Degraeve, R., Govoreanu, B., Jurczak, M., Wouters, D. J., & Altimime, L. (2010). Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells. Applied Physics Letters. https://doi.org/10.1063/1.3527086
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