The DOI matches its Crossref record; 12 of the 12 references it cites were found in a registry or an index.
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
Abstract
The endurance/retention performance of HfO2/ Metal cap RRAM devices in a 1T1R configuration shows metal cap dependence. For Hf and Ti caps, owning strong thermodynamic ability of extracting oxygen from HfO2, long pulse endurance (>1010cycles) could be achieved. For Ta cap, owning lower thermodynamic ability of extracting oxygen from HfO2, better retention can be achieved. Therefore, an endurance/retention performance tradeoff is identified on the 40 nm × 40 nm HfO2/Metal cap bipolar RRAM devices. The tradeoff of endurance/retention performance can be explained by a different filament constriction shape depending on metal cap layer as derived from fittingI-Vcurves in the quantum point contact model. This difference in filament constriction shape is attributed to the thermodynamics difference of metal cap: Hf and Ti have a stronger thermodynamical ability to extract oxygen from HfO2than Ta. The possibility of tuning the intrinsic reliability performance by changing the cap materials paves a way for optimizing the operation of RRAM devices into the desired specifics.
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QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
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Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
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Lee, H. Y., Chen, P. S., Wu, T. Y., Chen, Y. S., Wang, C. C., Tzeng, P. J., Lin, C. H., Chen, F., Lien, C. H., & Tsai, M.-J. (2008) · 2008 IEEE International Electron Devices Meeting · doi:10.1109/iedm.2008.4796677 · Cited by 641
Self-citationGovoreanu, B., Kar, G. S., Chen, Y.-Y., Paraschiv, V., Kubicek, S., Fantini, A., Radu, I. P., Goux, L., Clima, S., Degraeve, R., et al. (2011) · 2011 International Electron Devices Meeting · doi:10.1109/iedm.2011.6131652 · Cited by 624
Self-citationEvidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
Goux, L., Czarnecki, P., Chen, Y. Y., Pantisano, L., Wang, X. P., Degraeve, R., Govoreanu, B., Jurczak, M., Wouters, D. J., & Altimime, L. (2010) · Applied Physics Letters · doi:10.1063/1.3527086 · Cited by 232
Self-citationMulti-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application
Baek, I. G., Kim, D. C., Lee, M. J., Kim, H.-J., Yim, E. K., Lee, M. S., Lee, J. E., Ahn, S. E., Seo, S., Lee, J. H., et al. (2006) · IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. · doi:10.1109/iedm.2005.1609462 · Cited by 218
Chen, Y. S., Lee, H. Y., Chen, P. S., Gu, P. Y., Chen, C. W., Lin, W. P., Liu, W. H., Hsu, Y. Y., Sheu, S. S., Chiang, P. C., et al. (2009) · 2009 IEEE International Electron Devices Meeting (IEDM) · doi:10.1109/iedm.2009.5424411 · Cited by 205
Self-citationChen, Y. Y., Govoreanu, B., Goux, L., Degraeve, R., Fantini, A., Kar, G. S., Wouters, D. J., Groeseneken, G., Kittl, J. A., Jurczak, M., et al. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2218607 · Cited by 189
Self-citationGoux, L., Lisoni, J. G., Jurczak, M., Wouters, D. J., Courtade, L., & Müller, C. (2010) · Journal of Applied Physics · doi:10.1063/1.3275426 · Cited by 188
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Metadata
- Authors
- Chen, Y. Y., Goux, L., Clima, S., Govoreanu, B., Degraeve, R., Kar, G. S., Fantini, A., Groeseneken, G., Wouters, D. J., & Jurczak, M.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2013-03
- Volume
- 60
- Issue
- 3
- Pages
- 1114-1121
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W1851896842
- Cited by
- 271
- References
- 12
- FWCI
- 15.58
- Type
- journal article
- Language
- en
- Open access
- closed
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