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Raman scattering from LO phonon-plasmon coupled modes in gallium nitride
Abstract
Raman spectra of n-type gallium nitride with different carrier concentrations have been measured. The LO phonon band shifted towards the high-frequency side and broadened with an increase in carrier concentration. Results showed that the LO phonon was coupled to the overdamped plasmon in gallium nitride. The carrier concentrations and damping constants were determined by line-shape fitting of the coupled modes and compared to values obtained from Hall measurements. The carrier concentrations obtained from the two methods agree well. As a result, the dominant scattering mechanisms in gallium nitride are deformation-potential and electro-optic mechanisms.
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Cited by
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
Davydov, V. Y., Kitaev, Y. E., Goncharuk, I. N., Smirnov, A. N., Graul, J., Semchinova, O., Uffmann, D., Smirnov, M. B., Mirgorodsky, A. P., & Evarestov, R. A. (1998) · Physical Review B · doi:10.1103/physrevb.58.12899 · Cited by 836
Properties of GaN and related compounds studied by means of Raman scattering
Harima, H. (2002) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/14/38/201 · Cited by 699
Thermal conductivity of GaN, GaN71 , and SiC from 150 K to 850 K
Zheng, Q., Li, C., Rai, A., Leach, J. H., Broido, D. A., & Cahill, D. G. (2019) · Physical Review Materials · doi:10.1103/physrevmaterials.3.014601 · Cited by 177
Metadata
- Authors
- Kozawa, T., Kachi, T., Kano, H., Taga, Y., Hashimoto, M., Koide, N., & Manabe, K.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1994-01-15
- Volume
- 75
- Issue
- 2
- Pages
- 1098-1101
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2038530121
- Cited by
- 373
- References
- 0
- FWCI
- 9.13
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kozawa, T., Kachi, T., Kano, H., Taga, Y., Hashimoto, M., Koide, N., & Manabe, K. (1994). Raman scattering from LO phonon-plasmon coupled modes in gallium nitride. Journal of Applied Physics. https://doi.org/10.1063/1.356492
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