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The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Thermal conductivity anisotropy and grain structure in Ge2Sb2Te5 films

Lee, Jaeho, Li, Zijian, Reifenberg, John P., Lee, Sangchul, Sinclair, Robert, Asheghi, Mehdi, Goodson, Kenneth E.·2011·Journal of Applied Physics
DOI 10.1063/1.3573505
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Abstract

Although lateral thermal conduction in Ge2Sb2Te5 (GST) films can influence the performance of phase change memory (PCM), there are no data available for the in-plane thermal conductivity. This work measures both the in-plane and the out-of-plane thermal conductivities for the amorphous, face-centered-cubic, and hexagonal-close-packed phases of GST using two independent techniques. For crystalline GST, we report anisotropy favoring out-of-plane conduction by up to 54%, which varies with annealing time. Scaling arguments indicate that the anisotropy may be due to the thermal resistance of amorphous regions near grain boundaries. This explanation is consistent with transmission electron microscopy images showing columnar grains and amorphous phase at grain boundaries.

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Crossref · 10.1063/1.3573505

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2 of 2 references verified0 citation errors · 0 not checkable

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  • To increase measurement accuracy, it is desirable that the product of thin film in-plane thermal conductivity and film thickness be equal to or greater than the corresponding product of the substrate.

    “In order to increase measurement accuracy, Volklein et al. [74] concluded that it is desirable to have the product of the thin film in-plane thermal conductivity 𝑘 𝑓,∥ and film thickness 𝑑 𝑓 equal to or greater than the corresponding product of the substrate (i.e.𝑘 𝑓,∥ 𝑑 𝑓 ≥ 𝑘 𝑆 𝑑 𝑆 ).”

    From Measurement Techniques for Thermal Conductivity and Interfacial Thermal Conductance of Bulk and Thin Film Materials (2016) · cites this paper as [74]

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Metadata

Authors
Lee, J., Li, Z., Reifenberg, J. P., Lee, S., Sinclair, R., Asheghi, M., & Goodson, K. E.
Affiliations
  • Department of Mechanical Engineering, Stanford University 1 , Stanford, California 94305, USA
  • Stanford University 2 Department of Material Science Engineering, , Stanford, California 94305, USA
Venue
Journal of Applied Physics
Publisher
AIP Publishing
Published
2011-04-15
Volume
109
Issue
8
ISSN
  • 0021-8979
  • 1089-7550
DOI
10.1063/1.3573505
Cited by
85
References
2
Language
en
Funders
National Science Foundation (CBET-0853350)

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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

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