In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

Fujii, Takashi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, Ichiro

doi:10.1063/1.3593494

Cited by 82Advanced Memory and Neural ComputingPhase-change materials and chalcogenidesFerroelectric and Negative Capacitance Devices

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In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

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Fujii, Takashi, Arita, Masashi, Takahashi, Yasuo, Fujiwara, Ichiro·2011·Applied Physics Letters

DOI 10.1063/1.3593494

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Abstract

An in situ transmission electron microscopy (TEM) analysis of a solid electrolyte, Cu–GeS, during resistance switching is reported. Real-time observations of the filament formation and disappearance process were performed in the TEM instrument and the conductive-filament-formation model was confirmed experimentally. Narrow conductive filaments were formed corresponding to resistance switching from high- to low-resistance states. When the resistance changed to high-resistance state, the filament disappeared. It was also confirmed by use of selected area diffractometry and energy-dispersive x-ray spectroscopy that the conductive filament was made of nanocrystals composed mainly of Cu.

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Recent in-situ TEM studies have only focused on a small range of materials, mostly chalcogenide-based, without detailed analytical TEM characterizations.
“Recent attempts using in-situ TEM studies 20,21 have only focused on a small range of materials (mostly chalcogenide-based) without detailed analytical TEM characterizations.”
From Observation of conducting filament growth in nanoscale resistive memories (2012) · cites this paper as [21]
The paper does study a chalcogenide-based Cu-GeS device, but it directly contradicts the claim that the study lacked detailed analytical TEM characterization. Its introduction (page not specified in the supplied passages) says it used SAD and EDX to clarify the filament’s structure and composition; the results passages report diffraction patterns and EDX composition estimates. (LLM, conf=0.90)
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For many devices, the resistive switching effect is caused by the formation of conducting filaments.
“For many devices, the resistive switching effect is believed to be caused by the formation of conducting filaments 16-21 .”
From Observation of conducting filament growth in nanoscale resistive memories (2012) · cites this paper as [21]

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Authors: Fujii, T., Arita, M., Takahashi, Y., & Fujiwara, I.
Affiliations: Hokkaido University (JP)
Hokkaido University 1 Graduate School of Information Science and Technology, , Sapporo 060-0814, Japan
Semiconductor Technology Academic Research Center (Japan) (JP)
ORCID: Fujii, Takashi
Takahashi, Yasuo
Venue: Applied Physics Letters
Publisher: AIP Publishing
Published: 2011-05-23
Volume: 98
Issue: 21
Pages: 212104
ISSN: 0003-6951 (ISSN-L)
1077-3118
DOI: 10.1063/1.3593494
OpenAlex: W2032500223
Cited by: 82
References: 19
Citations by year: 2026: 2 · 2025: 2 · 2024: 3 · 2023: 10 · 2022: 5 · 2021: 2 · 2020: 6 · 2019: 5 · 2018: 6 · 2017: 5 · 2016: 9 · 2015: 9 · 2014: 3 · 2013: 6 · 2012: 8
FWCI: 4.03
Type: journal article
Language: en
Open access: bronze
doi.org
Locations: Applied Physics Letters (publishedVersion)
Institutional Repositories DataBase (IRDB) (submittedVersion)
Hokkaido University Collection of Scholarly and Academic Papers (Hokkaido University) (submittedVersion)
Funders: Hokkaido University
Japan Society for the Promotion of Science (21560681)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Keywords: conductive filaments, resistive switching, solid electrolytes, in situ transmission electron microscopy, nanocrystals, copper, resistive random access memory

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In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

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