The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Low-temperature photocarrier dynamics in monolayer MoS2
Open accessAbstract
The band structure of MoS2 strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS2. Single-layer MoS2 therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS2 flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed.
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Cites
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Photoluminescence from Chemically Exfoliated MoS 2
Eda, G., Yamaguchi, H., Voiry, D., Fujita, T., Chen, M., & Chhowalla, M. (2011) · Nano Letters · doi:10.1021/nl201874w · Cited by 3,896
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
Mak, K. F., & Shan, J. (2016) · Nature Photonics · doi:10.1038/nphoton.2015.282 · Cited by 3,819
Spin and pseudospins in layered transition metal dichalcogenides
Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Metadata
- Authors
- Korn, T., Heydrich, S., Hirmer, M., Schmutzler, J., & Schüller, C.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2011-09-05
- Volume
- 99
- Issue
- 10
- Pages
- 102109
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2079657036
- Cited by
- 777
- References
- 2
- FWCI
- 24.01
- Type
- journal article
- Language
- en
- Open access
- green
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- Korn, T., Heydrich, S., Hirmer, M., Schmutzler, J., & Schüller, C. (2011). Low-temperature photocarrier dynamics in monolayer MoS2. Applied Physics Letters. https://doi.org/10.1063/1.3636402
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