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Increased photoluminescence of strain-reduced, high-Sn composition Ge1−x Sn x alloys grown by molecular beam epitaxy
Abstract
We synthesized up to Ge0.914Sn0.086 alloys on (100) GaAs/InyGa1−yAs buffer layers using molecular beam epitaxy. The buffer layers enable engineered control of strain in the Ge1−xSnx layers to reduce strain-related defects and precipitation. Samples grown under similar conditions show a monotonic increase in the integrated photoluminescence (PL) intensity as the Sn composition is increased, indicating changes in the bandstructure favorable for optoelectronics. We account for bandgap changes from strain and composition to determine a direct bandgap bowing parameter of b = 2.1 ± 0.1. According to our models, these are the first Ge1−xSnx samples that are both direct-bandgap and exhibit PL.
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Citations
Cites
Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy
D’Costa, V. R., Cook, C. S., Birdwell, A. G., Littler, C. L., Canonico, M., Zollner, S., Kouvetakis, J., & Menéndez, J. (2006) · Physical Review B · doi:10.1103/physrevb.73.125207 · Cited by 338
Interband Transitions inSnxGe1−xAlloys
He, G., & Atwater, H. A. (1997) · Physical Review Letters · doi:10.1103/physrevlett.79.1937 · Cited by 322
Cited by
Lasing in direct-bandgap GeSn alloy grown on Si
Wirths, S., Geiger, R., von den Driesch, N., Mussler, G., Stoica, T., Mantl, S., Ikonic, Z., Luysberg, M., Chiussi, S., Hartmann, J. M., et al. (2015) · Nature Photonics · doi:10.1038/nphoton.2014.321 · Cited by 1,255
On-chip light sources for silicon photonics
Zhou, Z., Yin, B., & Michel, J. (2015) · Light: Science & Applications · doi:10.1038/lsa.2015.131 · Cited by 573
Grant, P. C., Dou, W., Alharthi, B., Grant, J. M., Tran, H., Abernathy, G., Mosleh, A., Du, W., Li, B., Mortazavi, M., et al. (2019) · Optical Materials Express · doi:10.1364/ome.9.003277 · Cited by 41
Metadata
- Authors
- Chen, R., Lin, H., Huo, Y., Hitzman, C., Kamins, T. I., & Harris, J. S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2011-10-31
- Volume
- 99
- Issue
- 18
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1970960917
- Cited by
- 257
- References
- 2
- FWCI
- 10.77
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chen, R., Lin, H., Huo, Y., Hitzman, C., Kamins, T. I., & Harris, J. S. (2011). Increased photoluminescence of strain-reduced, high-Sn composition Ge1−x Sn x alloys grown by molecular beam epitaxy. Applied Physics Letters. https://doi.org/10.1063/1.3658632
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