The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.
Interband Transitions inSnxGe1−xAlloys
Abstract
Optical absorption measurements for diamond cubic ${\mathrm{Sn}}_{x}{\mathrm{Ge}}_{1\ensuremath{-}x}$ alloy films indicate strong interband transitions with a change in direct energy gap of $0.35<{E}_{g}<0.80\mathrm{eV}$ for $0.15>x>0$. The optical energy gap undergoes an indirect to direct transition in this composition range and decreases much faster with Sn content than predicted by tight binding and pseudopotential calculations in the virtual crystal approximation.
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Payne, M. C., Teter, M. P., Allan, D. C., Arias, T. A., & Joannopoulos, J. D. (1992) · Reviews of Modern Physics · doi:10.1103/revmodphys.64.1045 · Cited by 9,728
The density functional formalism, its applications and prospects
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Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K
Dash, W. C., & Newman, R. (1955) · Physical Review · doi:10.1103/physrev.99.1151 · Cited by 1,021
Interaction of a relaxing system with a dynamical environment
Rendell, R. W. (1993) · Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics · doi:10.1103/physreve.48.r17 · Cited by 396
Refractive indexes and temperature coefficients of germanium and silicon
Icenogle, H. W., Platt, B. C., & Wolfe, W. L. (1976) · Applied Optics · doi:10.1364/ao.15.002348 · Cited by 233
Electronic properties of metastable Ge x Sn 1 − x alloys
Jenkins, D. W., & Dow, J. D. (1987) · Physical review. B, Condensed matter · doi:10.1103/physrevb.36.7994 · Cited by 215
Optical Properties of n -Type Indium Arsenide in the Fundamental Absorption Edge Region
Dixon, J. R., & Ellis, J. (1961) · Physical Review · doi:10.1103/physrev.123.1560 · Cited by 170
Absorption and Dispersion of Indium Antimonide
Moss, T. S., Smith, S. D., & Hawkins, T. (1957) · Proceedings of the Physical Society Section B · doi:10.1088/0370-1301/70/8/307 · Cited by 86
Optical Constants of Germanium in Spectral Region from 0.5 eV to 3.0 eV
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Wirths, S., Geiger, R., von den Driesch, N., Mussler, G., Stoica, T., Mantl, S., Ikonic, Z., Luysberg, M., Chiussi, S., Hartmann, J. M., et al. (2015) · Nature Photonics · doi:10.1038/nphoton.2014.321 · Cited by 1,255
On-chip light sources for silicon photonics
Zhou, Z., Yin, B., & Michel, J. (2015) · Light: Science & Applications · doi:10.1038/lsa.2015.131 · Cited by 573
Chen, R., Lin, H., Huo, Y., Hitzman, C., Kamins, T. I., & Harris, J. S. (2011) · Applied Physics Letters · doi:10.1063/1.3658632 · Cited by 257
On-chip silicon photonic signaling and processing: a review
Wang, J., & Long, Y. (2018) · Science Bulletin · doi:10.1016/j.scib.2018.05.038 · Cited by 206
GeSn p-i-n waveguide photodetectors on silicon substrates
Peng, Y.-H., Cheng, H. H., Mashanov, V. I., & Chang, G.-E. (2014) · Applied Physics Letters · doi:10.1063/1.4903881 · Cited by 98
Metadata
- Authors
- He, G., & Atwater, H. A.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1997-09-08
- Volume
- 79
- Issue
- 10
- Pages
- 1937-1940
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1613229453
- Cited by
- 322
- References
- 9
- FWCI
- 2.01
- Type
- journal article
- Language
- en
- Open access
- closed
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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