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Simulation of multilevel switching in electrochemical metallization memory cells
Abstract
We report on a simulation model for bipolar resistive switching in cation-migration based memristive devices. The model is based on the electrochemical driven growth and dissolution of a metallic filament. The origin of multilevel switching is proposed to be direct tunneling between the growing filament and the counter electrode. An important result of our parameter simulation studies is that different materials show the same experimental multilevel behavior. Our model fully reproduces the experimental data and allows for an explanation of the transition from bipolar to nonpolar switching.
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Self-citationResistance switching memories are memristors
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A comprehensive review on emerging artificial neuromorphic devices
Zhu, J., Zhang, T., Yang, Y., & Huang, R. (2020) · Applied Physics Reviews · doi:10.1063/1.5118217 · Cited by 758
Nanobatteries in redox-based resistive switches require extension of memristor theory
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Self-citationAHaH Computing–From Metastable Switches to Attractors to Machine Learning
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Thermodynamic-RAM technology stack
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Metadata
- Authors
- Menzel, S., Böttger, U., & Waser, R.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2012-01-01
- Volume
- 111
- Issue
- 1
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2009604146
- Cited by
- 166
- References
- 5
- FWCI
- 14.04
- Type
- journal article
- Language
- en
- Open access
- closed
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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