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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Abstract
We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a semi-insulating β-Ga2O3 (010) substrate by molecular-beam epitaxy. We fabricated a circular MESFET with a gate length of 4 μm and a source–drain spacing of 20 μm. The device showed an ideal transistor action represented by the drain current modulation due to the gate voltage (VGS) swing. A complete drain current pinch-off characteristic was also obtained for VGS < −20 V, and the three-terminal off-state breakdown voltage was over 250 V. A low drain leakage current of 3 μA at the off-state led to a high on/off drain current ratio of about 10 000. These device characteristics obtained at the early stage indicate the great potential of Ga2O3-based electrical devices for future power device applications.
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Cited by
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., et al. (2018) · Advanced Electronic Materials · doi:10.1002/aelm.201600501 · Cited by 1,602
Self-citationPerspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Pearton, S. J., Ren, F., Tadjer, M., & Kim, J. (2018) · Journal of Applied Physics · doi:10.1063/1.5062841 · Cited by 659
Metadata
- Authors
- Higashiwaki, M., Sasaki, K., Kuramata, A., Masui, T., & Yamakoshi, S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2012-01-02
- Volume
- 100
- Issue
- 1
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2020431932
- Cited by
- 1,813
- References
- 0
- FWCI
- 14.45
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. https://app.cochat.ai/papers/10.1063/1.3674287
- The paper
- Higashiwaki, M., Sasaki, K., Kuramata, A., Masui, T., & Yamakoshi, S. (2012). Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Applied Physics Letters. https://doi.org/10.1063/1.3674287
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