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Picotesla field sensor design using spin-dependent tunneling devices

Tondra, Mark, Daughton, James M., Wang, Dexin, Beech, Russell S., Fink, Anita, Taylor, John A.·1998·Journal of Applied Physics

Abstract

Pinned spin-dependent tunneling devices were fabricated and tested in a mode suited for low-field sensing. The basic structure of the devices was NiFeCo125/Al2O325/CoFe70/Ru9/CoFe70/ FeMn125 (in Å). This structure had a tunneling resistivity of 110 MΩ μm2 and exhibited a 20% magnetoresistance when a field was swept along the easy direction of the soft electrode. High sensitivity, low hysteresis operation was achieved by applying a bias field orthogonal to the easy axis. A sensitivity of 3%/Oe with negligible hysteresis was observed using this mode of operation. A sensor using this type of material was designed to achieve a minimum resolvable field in the picotesla range. The sensor consists of a bridge with four elements, each having 16 tunnel junctions in series. A signal-to-noise ratio of 1:1 at 1 pT (10−8 Oe) is possible assuming achievable values for the tunneling resistivity, device size, bias level, and sensitivity.

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Metadata

Authors
Tondra, M., Daughton, J. M., Wang, D., Beech, R. S., Fink, A., & Taylor, J. A.
Venue
Journal of Applied Physics
Published
1998-06-01
Volume
83
Issue
11
Pages
6688-6690
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W2029210868
Cited by
161
References
0
FWCI
15.07
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Picotesla field sensor design using spin-dependent tunneling devices. https://app.cochat.ai/papers/10.1063/1.367861
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Tondra, M., Daughton, J. M., Wang, D., Beech, R. S., Fink, A., & Taylor, J. A. (1998). Picotesla field sensor design using spin-dependent tunneling devices. Journal of Applied Physics. https://doi.org/10.1063/1.367861

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.