The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
GaN: Processing, defects, and devices
Abstract
The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.
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Citations
Cites
High electron mobility transistor based on a GaN-Al x Ga1−x N heterojunction
Asif Khan, M., Bhattarai, A., Kuznia, J. N., & Olson, D. T. (1993) · Applied Physics Letters · doi:10.1063/1.109775 · Cited by 911
Cited by
AlGaN/GaN HEMTs—An Overview of Device Operation and Applications
Mishra, U. K., Parikh, P., & Wu, Y.-F. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021567 · Cited by 2,312
High-temperature electronics - a role for wide bandgap semiconductors?
Neudeck, P. G., Okojie, R. S., & Chen, L.-Y. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021571 · Cited by 1,050
Properties of GaN and related compounds studied by means of Raman scattering
Harima, H. (2002) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/14/38/201 · Cited by 699
Metadata
- Authors
- Pearton, S. J., Zolper, J. C., Shul, R. J., & Ren, F.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1999-07-01
- Volume
- 86
- Issue
- 1
- Pages
- 1-78
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2087116976
- Cited by
- 1,814
- References
- 1
- FWCI
- 102.66
- Type
- journal article
- Language
- en
- Open access
- closed
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- Pearton, S. J., Zolper, J. C., Shul, R. J., & Ren, F. (1999). GaN: Processing, defects, and devices. Journal of Applied Physics. https://doi.org/10.1063/1.371145
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