The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Surface oxidation activates indium tin oxide for hole injection
Abstract
Oxygen plasma treatment of indium tin oxide (ITO) results in a change in work function and electron affinity by ∼0.5 eV. This change correlates with the measured increase in injected current in simple “hole-only” organic devices with O-plasma treated ITO electrodes. Neither addition nor removal of surface hydroxyl functionality accounts for the observed work function and electron affinity changes. X-ray and ultraviolet photoelectron spectroscopies show a new type of oxygen species is formed. Oxidation of surface Sn-OH to surface Sn-O• units is proposed to account for the observed changes in O-plasma treated ITO; this proposal can explain a wide variety of previously described ITO surface activation results.
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Cites
Organic electroluminescent diodes
Tang, C. W., & VanSlyke, S. A. (1987) · Applied Physics Letters · doi:10.1063/1.98799 · Cited by 14,363
Principles of Plasma Discharges and Materials Processing
Lieberman, M. A., & Lichtenberg, A. J. (2005) · doi:10.1002/0471724254 · Cited by 4,748
Carrier tunneling and device characteristics in polymer light-emitting diodes
Parker, I. D. (1994) · Journal of Applied Physics · doi:10.1063/1.356350 · Cited by 1,523
Wu, C. C., Wu, C. I., Sturm, J. C., & Kahn, A. (1997) · Applied Physics Letters · doi:10.1063/1.118575 · Cited by 715
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Cited by
Transparent Conducting Oxides—An Up-To-Date Overview
Stadler, A. (2012) · Materials · doi:10.3390/ma5040661 · Cited by 448
Metadata
- Authors
- Milliron, D. J., Hill, I. G., Shen, C., Kahn, A., & Schwartz, J.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2000-01-01
- Volume
- 87
- Issue
- 1
- Pages
- 572-576
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2065556544
- Cited by
- 300
- References
- 4
- FWCI
- 25.99
- Type
- journal article
- Language
- en
- Open access
- closed
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