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Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
Abstract
The effects of annealing temperature (Tanneal) and film thickness (tf) on the crystal structure and ferroelectric properties of Hf0.5Zr0.5O2 films were examined. The Hf0.5Zr0.5O2 films consist of tetragonal, orthorhombic, and monoclinic phases. The orthorhombic phase content, which is responsible for the ferroelectricity in this material, is almost independent of Tanneal, but decreases with increasing tf. In contrast, increasing Tanneal and tf monotonically increases (decreases) the amount of monoclinic (tetragonal) phase, which coincides with the variations in the dielectric constant. The remanant polarization was determined by the content of orthorhombic phase as well as the spatial distribution of other phases.
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Citations
Cited by
The fundamentals and applications of ferroelectric HfO2
Schroeder, U., Park, M. H., Mikolajick, T., & Hwang, C. S. (2022) · Nature Reviews Materials · doi:10.1038/s41578-022-00431-2 · Cited by 710
A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
Wei, Y., Nukala, P., Salverda, M., Matzen, S., Zhao, H. J., Momand, J., Everhardt, A. S., Agnus, G., Blake, G. R., Lecoeur, P., et al. (2018) · Nature Materials · doi:10.1038/s41563-018-0196-0 · Cited by 587
Review and perspective on ferroelectric HfO2-based thin films for memory applications
Park, M. H., Lee, Y. H., Mikolajick, T., Schroeder, U., & Hwang, C. S. (2018) · MRS Communications · doi:10.1557/mrc.2018.175 · Cited by 579
Ferroelectricity in undoped hafnium oxide
Polakowski, P., & Müller, J. (2015) · Applied Physics Letters · doi:10.1063/1.4922272 · Cited by 419
Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
Kim, S. J., Mohan, J., Summerfelt, S. R., & Kim, J. (2019) · JOM · doi:10.1007/s11837-018-3140-5 · Cited by 363
Metadata
- Authors
- Hyuk Park, M., Joon Kim, H., Jin Kim, Y., Lee, W., Moon, T., & Seong Hwang, C.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2013-06-17
- Volume
- 102
- Issue
- 24
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2030237677
- Cited by
- 829
- References
- 0
- FWCI
- 11.58
- Type
- journal article
- Language
- en
- Open access
- closed
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- Hyuk Park, M., Joon Kim, H., Jin Kim, Y., Lee, W., Moon, T., & Seong Hwang, C. (2013). Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature. Applied Physics Letters. https://doi.org/10.1063/1.4811483
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