The DOI matches its Crossref record; 77 of the 77 references it cites were found in a registry or an index.
Review and perspective on ferroelectric HfO2-based thin films for memory applications
Open accessAbstract
The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing. However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues. Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material’s point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Principles and Applications of Ferroelectrics and Related Materials
Lines, M. E., & Glass, A. M. (2001) · Oxford University Press eBooks · doi:10.1093/acprof:oso/9780198507789.001.0001 · Cited by 5,257
Scott, J. F., & Paz de Araujo, C. A. (1989) · Science · doi:10.1126/science.246.4936.1400 · Cited by 3,863
Ferroelectricity in hafnium oxide thin films
Böscke, T. S., Müller, J., Bräuhaus, D., Schröder, U., & Böttger, U. (2011) · Applied Physics Letters · doi:10.1063/1.3634052 · Cited by 2,832
Ferroelectric thin films: Review of materials, properties, and applications
Setter, N., Damjanovic, D., Eng, L., Fox, G., Gevorgian, S., Hong, S., Kingon, A., Kohlstedt, H., Park, N. Y., Stephenson, G. B., et al. (2006) · Journal of Applied Physics · doi:10.1063/1.2336999 · Cited by 1,907
Critical thickness for ferroelectricity in perovskite ultrathin films
Junquera, J., & Ghosez, P. (2003) · Nature · doi:10.1038/nature01501 · Cited by 1,713
Scott, J. F. (2000) · Springer Series in Advanced Microelectronics · doi:10.1007/978-3-662-04307-3 · Cited by 1,424
Ferroelectricity in Ultrathin Perovskite Films
Fong, D. D., Stephenson, G. B., Streiffer, S. K., et al. (2004) · Science · doi:10.1126/science.1098252 · Cited by 1,296
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
Park, M. H., Lee, Y. H., Kim, H. J., Kim, Y. J., Moon, T., Kim, K. D., Müller, J., Kersch, A., Schroeder, U., Mikolajick, T., et al. (2015) · Advanced Materials · doi:10.1002/adma.201404531 · Cited by 1,189
Self-citationPhysical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
Pešić, M., Fengler, F. P. G., Larcher, L., Padovani, A., Schenk, T., Grimley, E. D., Sang, X., LeBeau, J. M., Slesazeck, S., Schroeder, U., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600590 · Cited by 964
Self-citationIncipient Ferroelectricity in Al‐Doped HfO2 Thin Films
Mueller, S., Mueller, J., Singh, A., Riedel, S., Sundqvist, J., Schroeder, U., & Mikolajick, T. (2012) · Advanced Functional Materials · doi:10.1002/adfm.201103119 · Cited by 861
Self-citation
Cited by
Mazari, S. A., Ali, E., Abro, R., Khan, F. S. A., Ahmed, I., Ahmed, M., Nizamuddin, S., Siddiqui, T. H., Hossain, N., Mubarak, N. M., et al. (2021) · Journal of Environmental Chemical Engineering · doi:10.1016/j.jece.2021.105028 · Cited by 316
Acharya, M., Banyas, E., Ramesh, M., Jiang, Y., Fernandez, A., Dasgupta, A., Ling, H., Hanrahan, B., Persson, K., Neaton, J. B., et al. (2022) · Advanced Materials · doi:10.1002/adma.202105967 · Cited by 71
Fluorite-structure antiferroelectrics
Park, M. H., & Hwang, C. S. (2019) · Reports on Progress in Physics · doi:10.1088/1361-6633/ab49d6 · Cited by 69
Self-citationGier, C., Ben Yaala, M., Wiseman, C., MacFoy, S., Chicoine, M., Schiettekatte, F., Hough, J., Rowan, S., Martin, I., MacKay, P., et al. (2023) · Thin Solid Films · doi:10.1016/j.tsf.2023.139781 · Cited by 17
Nanoscale-Thick Thin Films of High-Density HfO 2 for Bulk-like Optical Responses
Sun, L., Jones, J. G., Grant, J. T., Murphy, N. R., Ramana, C. V., Eyink, K. G., Vernon, J. P., & Stevenson, P. R. (2021) · ACS Applied Nano Materials · doi:10.1021/acsanm.1c02267 · Cited by 13
Metadata
- Authors
- Park, M. H., Lee, Y. H., Mikolajick, T., Schroeder, U., & Hwang, C. S.
- Venue
- MRS Communications
- Published
- 2018-08-28
- Volume
- 8
- Issue
- 3
- Pages
- 795-808
- ISSN
- 2159-6859 (ISSN-L)
- 2159-6867
- OpenAlex
- W2889470051
- Cited by
- 579
- References
- 77
- FWCI
- 16.09
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Review and perspective on ferroelectric HfO2-based thin films for memory applications. https://app.cochat.ai/papers/10.1557/mrc.2018.175
- The paper
- Park, M. H., Lee, Y. H., Mikolajick, T., Schroeder, U., & Hwang, C. S. (2018). Review and perspective on ferroelectric HfO2-based thin films for memory applications. MRS Communications. https://doi.org/10.1557/mrc.2018.175
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
