Effect of Composition and Strain on the Electrical Properties of LaNiO3 Thin Films
Abstract
The Ni content of LaNi1−xO3 epitaxial thin films grown by pulsed laser deposition has been varied by ablation from targets with different composition. While tensile strain and Ni substoichiometry reduce the conductivity, nearly stoichiometric and unstrained films show reproducibly resistivities below 100 μΩ × cm. Since the thermodynamic instability of the Ni3+ state drives defect formation, Ni defect engineering is the key to obtain highly conducting LaNiO3 thin films.
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High quality epitaxial LNO films with resistivity as low as ~100 μOhm·cm can be prepared on single-crystal substrates with similar lattice parameters by MBE, PLD, or PVD.
“High quality epitaxial LNO films with resistivity as low as ~100 μOhm·cm can be prepared on single-crystal substrates with similar lattice parameters (LaAlO3, SrTiO3) by molecular beam epitaxy (MBE), pulsed laser deposition (PLD), or physical vapor deposition (PVD) [27,28,29,30].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [28]
Epitaxial thin films obtain approximately the same resistivity from ρ = 100 μOhm·cm for the PLD technique to ρ = 340 μOhm·cm for the CSD method.
“Epitaxial thin films obtain approximately the same resistivity from ρ =100 µOhm·cm for the PLD technique [28] to ρ = 340 µOhm·cm for the CSD method [90].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [28]
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Control of Columnar Grain Microstructure in CSD LaNiO3 Films
Atanova, A. V., Seregin, D. S., Zhigalina, O. M., Khmelenin, D. N., Orlov, G. A., Turkina, D. I., Sigov, A. S., & Vorotilov, K. A. (2023) · Molecules · doi:10.3390/molecules28041938 · Cited by 5 · see citing works
- Authors
- Zhu, M., Komissinskiy, P., Radetinac, A., Vafaee, M., Wang, Z., & Alff, L.
- Affiliations
- Chinese Academy of Sciences (CN)
- Technische Universität Darmstadt (DE)
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 2 , Wenhua Road 72, 110016 Shenyang, People's Republic of China
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2013-09-30
- Volume
- 103
- Issue
- 14
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1969580609
- Cited by
- 38
- References
- 0
- Citations by year
- 2025: 1 · 2024: 1 · 2023: 5 · 2022: 3 · 2021: 2 · 2020: 3 · 2019: 1 · 2018: 3 · 2017: 3 · 2016: 10 · 2015: 5 · 2014: 1
- FWCI
- 2.41
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic and transport properties of perovskites and related materials
- Physical Sciences › Materials Science › Materials Chemistry › Advancements in Solid Oxide Fuel Cells
- Keywords
- LaNiO3, epitaxial thin films, electrical conductivity, tensile strain, pulsed laser deposition, target composition, defect engineering, electrical resistivity
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