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Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping
Abstract
We present a method for making stable MoS2 rectifying diodes using selected-area plasma treatment. The transport and X-ray photoelectron spectroscopic characterizations of MoS2 transistors treated with different plasmas confirm that the rectifying characteristics of MoS2 diodes are attributed to plasma-induced p-doping and p-n junctions in MoS2. Such plasma-doped diodes exhibit high forward/reverse current ratios (∼104 for SF6-treated diodes) and a superior long-term stability. They can play an important role in the development of nanoelectronic devices. In addition, the presented plasma-assisted doping process could be also used for making ambipolar MoS2 transistors and functionalizing other emerging two-dimensional materials.
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Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
Azcatl, A., Qin, X., Prakash, A., Zhang, C., Cheng, L., Wang, Q., Lu, N., Kim, M. J., Kim, J., Cho, K., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.6b01853 · Cited by 491
Metadata
- Authors
- Chen, M., Nam, H., Wi, S., Ji, L., Ren, X., Bian, L., Lu, S., & Liang, X.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2013-09-30
- Volume
- 103
- Issue
- 14
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1980266980
- Cited by
- 223
- References
- 0
- FWCI
- 8.14
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping. https://app.cochat.ai/papers/10.1063/1.4824205
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- Chen, M., Nam, H., Wi, S., Ji, L., Ren, X., Bian, L., Lu, S., & Liang, X. (2013). Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping. Applied Physics Letters. https://doi.org/10.1063/1.4824205
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