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Cited by 30Quantum and electron transport phenomenaAdvancements in Semiconductor Devices and Circuit DesignAnalog and Mixed-Signal Circuit Design

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Cryogenic amplifier for shot noise measurement at 20 mK

Arakawa, Tomonori, Nishihara, Yoshitaka, Maeda, Masahiro, Norimoto, Shota, Kobayashi, Kensuke·2013·Applied Physics Letters
DOI 10.1063/1.4826681
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Abstract

We developed a shot noise measurement system for mesoscopic conductors (typical resistance h/2e2 = 12.9 kΩ) at very low temperature (∼20 mK). To realize required high-resolution measurement, we made a high-electron-mobility-transistor (HEMT)-based cryogenic amplifier working at a target frequency range (∼2.5 MHz), whose gain flatness and input voltage noise were carefully tuned. We can suppress the 1/f noise of the amplifier by using two HEMTs in parallel. The performance of the noise measurement system at 20 mK was demonstrated for a quantum point contact with high experimental accuracy below 10−29 A2/Hz.

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  • III-V direct band gap semiconductor devices like Ga-As based pHEMTs are one of the most preferred choices for developing cryogenic amplifiers.

    “whereas III-V direct band gap semiconductor devices like Ga-As based pHEMTs are one of the most preferred choice for developing cryogenic amplifiers [12-28].”

    From Development and Characterization of a Cryogenic Tuned Amplifier for Penning Trap Applications (2025) · cites this paper as [19]

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References 22 · Cited by 30

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  1. 1998, Nature, 392, 658, 10.1038/33551 · DOI
  2. 2000, Phys. Rep., 336, 1, 10.1016/S0370-1573(99)00123-4 · DOI
  3. 1995, Phys. Rev. Lett., 75, 3340, 10.1103/PhysRevLett.75.3340 · DOI
  4. 1996, Phys. Rev. Lett., 76, 2778, 10.1103/PhysRevLett.76.2778 · DOI
  5. 2004, Phys. Rev. Lett., 93, 116602, 10.1103/PhysRevLett.93.116602 · DOI
  6. 2006, Phys. Rev. Lett., 97, 036810, 10.1103/PhysRevLett.97.036810 · DOI
  7. 2009, Phys. Rev. B, 79, 201308, 10.1103/PhysRevB.79.201308 · DOI
  8. 2012, Appl. Phys. Lett., 100, 203111, 10.1063/1.4718934 · DOI
  9. 2012, Nature Commun., 3, 1082, 10.1038/ncomms2080 · DOI
  10. 2008, Phys. Rev. B, 77, 241303, 10.1103/PhysRevB.77.241303 · DOI
  11. 2011, Phys. Rev. Lett., 106, 176601, 10.1103/PhysRevLett.106.176601 · DOI
  12. 2013, Phys. Rev. B, 87, 041302, 10.1103/PhysRevB.87.041302 · DOI
  13. 2012, Phys. Rev. B, 85, 041309, 10.1103/PhysRevB.85.041309 · DOI
  14. 1997, Phys. Rev. Lett., 79, 2526, 10.1103/PhysRevLett.79.2526 · DOI
  15. 1997, Nature, 389, 162, 10.1038/38241 · DOI
  16. 2006, Rev. Sci. Instrum., 77, 073906, 10.1063/1.2221541 · DOI
  17. 2008, Phys. Status Solidi C, 5, 182, 10.1002/pssc.200776535 · DOI
  18. 2008, J. Phys.: Conf. Ser., 109, 012013, 10.1088/1742-6596/109/1/012013 · DOI
  19. 2009, Rev. Sci. Instrum., 80, 096105, 10.1063/1.3227029 · DOI
  20. 2010, Phys. Rev. Lett., 104, 080602, 10.1103/PhysRevLett.104.080602 · DOI
  21. 2011, Phys. Rev. B, 83, 155431, 10.1103/PhysRevB.83.155431 · DOI

Metadata

Authors
Arakawa, T., Nishihara, Y., Maeda, M., Norimoto, S., & Kobayashi, K.
Affiliations
The University of Osaka (JP)
ORCID
Venue
Applied Physics Letters
Publisher
AIP Publishing
Published
2013-10-21
Volume
103
Issue
17
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
DOI
10.1063/1.4826681
OpenAlex
W2010219616
Cited by
30
References
22
Citations by year
2025: 1 · 2024: 1 · 2023: 1 · 2022: 2 · 2021: 6 · 2020: 3 · 2019: 5 · 2018: 4 · 2017: 3 · 2016: 2 · 2015: 2
FWCI
0.69
Type
journal article
Language
en
Open access
closed
Locations
Applied Physics Letters (publishedVersion)
Funders
Japan Society for the Promotion of Science (25103003, 13J00185, 25887037)
Topics
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Analog and Mixed-Signal Circuit Design
Keywords
cryogenic amplifiers, high electron mobility transistors, mesoscopic conductors, quantum point contacts, 1/f noise reduction, low-temperature noise

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