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Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
Abstract
Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up.
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Citations
Cited by
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
Pešić, M., Fengler, F. P. G., Larcher, L., Padovani, A., Schenk, T., Grimley, E. D., Sang, X., LeBeau, J. M., Slesazeck, S., Schroeder, U., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600590 · Cited by 964
Self-citationEvidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
Starschich, S., Menzel, S., & Böttger, U. (2016) · Applied Physics Letters · doi:10.1063/1.4940370 · Cited by 308
Zhou, Y., Zhang, Y. K., Yang, Q., Jiang, J., Fan, P., Liao, M., & Zhou, Y. C. (2019) · Computational Materials Science · doi:10.1016/j.commatsci.2019.05.041 · Cited by 268
Electric field cycling behavior of ferroelectric hafnium oxide
Schenk, T., Schroeder, U., Pešić, M., Popovici, M., Pershin, Y. V., & Mikolajick, T. (2014) · ACS Applied Materials & Interfaces · doi:10.1021/am504837r · Cited by 197
Self-citationAntiferroelectric oxide thin-films: Fundamentals, properties, and applications
Si, Y., Zhang, T., Liu, C., Das, S., Xu, B., Burkovsky, R. G., Wei, X.-K., & Chen, Z. (2024) · Progress in Materials Science · doi:10.1016/j.pmatsci.2023.101231 · Cited by 84
Metadata
- Authors
- Zhou, D., Xu, J., Li, Q., Guan, Y., Cao, F., Dong, X., Müller, J., Schenk, T., & Schröder, U.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2013-11-04
- Volume
- 103
- Issue
- 19
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2018452678
- Cited by
- 408
- References
- 0
- FWCI
- 9.19
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhou, D., Xu, J., Li, Q., Guan, Y., Cao, F., Dong, X., Müller, J., Schenk, T., & Schröder, U. (2013). Wake-up effects in Si-doped hafnium oxide ferroelectric thin films. Applied Physics Letters. https://doi.org/10.1063/1.4829064
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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