The DOI matches its Crossref record; 33 of the 33 references it cites were found in a registry or an index.
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
Open accessAbstract
Novel hafnium oxide (HfO 2)‐based ferroelectrics reveal full scalability and complementary metal oxide semiconductor integratability compared to perovskite‐based ferroelectrics that are currently used in nonvolatile ferroelectric random access memories (FeRAMs). Within the lifetime of the device, two main regimes of wake‐up and fatigue can be identified. Up to now, the mechanisms behind these two device stages have not been revealed. Thus, the main scope of this study is an identification of the root cause for the increase of the remnant polarization during the wake‐up phase and subsequent polarization degradation with further cycling. Combining the comprehensive ferroelectric switching current experiments, Preisach density analysis, and transmission electron microscopy (TEM) study with compact and Technology Computer Aided Design (TCAD) modeling, it has been found out that during the wake‐up of the device no new defects are generated but the existing defects redistribute within the device. Furthermore, vacancy diffusion has been identified as the main cause for the phase transformation and consequent increase of the remnant polarization. Utilizing trap density spectroscopy for examining defect evolution with cycling of the device together with modeling of the degradation results in an understanding of the main mechanisms behind the evolution of the ferroelectric response.
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Cites
Ferroelectricity in hafnium oxide thin films
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Ferroelectricity in Simple Binary ZrO2 and HfO2
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Self-citationCharacterizing interactions in fine magnetic particle systems using first order reversal curves
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On the structural origins of ferroelectricity in HfO2 thin films
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Self-citationStabilizing the ferroelectric phase in doped hafnium oxide
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Self-citationTagantsev, A. K., Stolichnov, I., Colla, E. L., & Setter, N. (2001) · Journal of Applied Physics · doi:10.1063/1.1381542 · Cited by 602
Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
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Self-citationFerroelectricity in undoped hafnium oxide
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Impact of different dopants on the switching properties of ferroelectric hafniumoxide
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A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
Wei, Y., Nukala, P., Salverda, M., Matzen, S., Zhao, H. J., Momand, J., Everhardt, A. S., Agnus, G., Blake, G. R., Lecoeur, P., et al. (2018) · Nature Materials · doi:10.1038/s41563-018-0196-0 · Cited by 587
Zhou, Y., Zhang, Y. K., Yang, Q., Jiang, J., Fan, P., Liao, M., & Zhou, Y. C. (2019) · Computational Materials Science · doi:10.1016/j.commatsci.2019.05.041 · Cited by 268
Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors
Lomenzo, P. D., Chung, C.-C., Zhou, C., Jones, J. L., & Nishida, T. (2017) · Applied Physics Letters · doi:10.1063/1.4985297 · Cited by 117
Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
Si, Y., Zhang, T., Liu, C., Das, S., Xu, B., Burkovsky, R. G., Wei, X.-K., & Chen, Z. (2024) · Progress in Materials Science · doi:10.1016/j.pmatsci.2023.101231 · Cited by 84
2022 roadmap on neuromorphic computing and engineering
Christensen, D. V., Dittmann, R., Linares-Barranco, B., Sebastian, A., Le Gallo, M., Redaelli, A., Slesazeck, S., Mikolajick, T., Spiga, S., Menzel, S., et al. (2022) · Neuromorphic Computing and Engineering · doi:10.1088/2634-4386/ac4a83
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Metadata
- Authors
- Pešić, M., Fengler, F. P. G., Larcher, L., Padovani, A., Schenk, T., Grimley, E. D., Sang, X., LeBeau, J. M., Slesazeck, S., Schroeder, U., & Mikolajick, T.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2016-05-06
- Volume
- 26
- Issue
- 25
- Pages
- 4601-4612
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W2346962696
- Cited by
- 964
- References
- 33
- FWCI
- 24.85
- Type
- journal article
- Language
- en
- Open access
- green
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- Pešić, M., Fengler, F. P. G., Larcher, L., Padovani, A., Schenk, T., Grimley, E. D., Sang, X., LeBeau, J. M., Slesazeck, S., Schroeder, U., & Mikolajick, T. (2016). Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors. Advanced Functional Materials. https://doi.org/10.1002/adfm.201600590
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