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Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics
Abstract
We report on the results obtained from specially designed high electron mobility transistors at 4.2 K: the gate leakage current can be limited lower than 1 aA, and the equivalent input noise-voltage and noise-current at 1 Hz can reach 6.3 nV/Hz1∕2 and 20 aA/Hz1∕2, respectively. These results open the way to realize high performance low-frequency readout electronics under very low-temperature conditions.
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III-V direct band gap semiconductor devices like Ga-As based pHEMTs are one of the most preferred choices for developing cryogenic amplifiers.
“whereas III-V direct band gap semiconductor devices like Ga-As based pHEMTs are one of the most preferred choice for developing cryogenic amplifiers [12-28].”
From Development and Characterization of a Cryogenic Tuned Amplifier for Penning Trap Applications (2025) · cites this paper as [17]
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References 17 · Cited by 52
Research works printed but not linked: 17
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Metadata
- Authors
- Dong, Q., Liang, Y. X., Ferry, D., Cavanna, A., Gennser, U., Couraud, L., & Jin, Y.
- Affiliations
- Centre National de la Recherche Scientifique (FR)
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2014-07-07
- Volume
- 105
- Issue
- 1
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2091353561
- Cited by
- 52
- References
- 17
- Citations by year
- 2026: 1 · 2025: 3 · 2024: 4 · 2023: 4 · 2022: 1 · 2021: 3 · 2020: 2 · 2019: 10 · 2018: 10 · 2017: 1 · 2016: 7 · 2015: 2 · 2014: 4
- FWCI
- 2.48
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Superconducting and THz Device Technology
- Keywords
- high electron mobility transistors, ultra-low noise, cryogenic readout electronics, gate leakage current, equivalent input noise, 4.2 K
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