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Investigation of the Impact of High Temperatures on the Switching Kinetics of Redox‐Based Resistive Switching Cells using a High‐Speed Nanoheater

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Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structure

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Influence of annealing environment on the ALD-Al 2 O 3 /4H-SiC interface studied through XPS

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Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices

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Diffusion of oxygen in amorphous tantalum oxide

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Chemically modified nanocrystalline SnO2-based materials for nitrogen-containing gases detection using gas sensor array

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Testing the Cabrera–Mott Oxidation Model for Aluminum under Realistic Conditions with Near-Ambient Pressure Photoemission

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Time and rate dependent synaptic learning in neuro-mimicking resistive memories

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Evidence for oxygen being a dominant shallow acceptor in p-type CuI

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Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx

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Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x ∼ 1

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A Comparative Study on the Diffusion Behaviors of Metal and Oxygen Ions in Metal-Oxide-Based Resistance Switches via ab Initio Molecular Dynamics Simulations

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Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide

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Unravelling the Data Retention Mechanisms under Thermal Stress on 2D Memristors

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Influence of high heating rates on evolution of oxides on directed laser energy additively fabricated IN718

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Impact of Electrolyte Incorporation in Anodized Niobium on Its Resistive Switching

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Atomistic simulations to reveal HIP-bonding mechanisms of Al6061/Al6061

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Modeling of Current Conduction during RESET Phase of Pt/Ta2O5/TaOx/Pt Bipolar Resistive RAM Devices

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Quantifying the Local Structure of Nanocrystals, Glasses, and Interfaces Using TEM-Based Diffraction

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The effect of nanometre-scale kinetic competition on the phase selection in Zr/Si superstructure

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Disentangling the oxidation mechanisms of high-entropy carbonitrides

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Low temperature electroformation of TaOx-based resistive switching devices

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Resistive switching properties of Mn-doped amorphous Nb2O5 thin films for resistive RAM application

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Performance Enhancement of Transparent Amorphous IGZO Thin-Film Transistor Realized by Sputtered Amorphous AlOx Passivation Layer

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Low Energy and Analog Memristor Enabled by Regulation of Ru ion Motion for High Precision Neuromorphic Computing

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Niobium Oxides: The key role of hydroxylated surface on photocatalytic driven C–C reductive coupling of acetophenone

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Insight into Facile Ion Diffusion in Resistive Switching Medium toward Low Operating Voltage Memory

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Oxidation of fine aluminum particles: thermally induced transformations in particle shells and kinetics of oxide nucleation

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AgBiS 2 quantum dot based multilevel resistive switching for low power electronics

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Long-Term Sustainability of High-Mobility Ultrathin a-IGZO TFT with Double-Layered Passivation

Tang, Y., Song, Y., & Nomura, K. (2025) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5c08848 · Cited by 11

Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristors

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Molecular dynamics simulations of pressure-induced structural and mechanical property changes in amorphous Al2O3

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Effect of Heating Rates on Non-Isothermal and Isothermal Oxidation Behavior of Additive Friction Stir Deposited Nickel Base Superalloy IN625

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Electronegative metal dopants improve switching variability in Al2O3 resistive switching devices

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Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

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Bistability and metastability of oxygen vacancies in amorphous Al2O3: A possible origin of resistance switching mechanism

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Mechanistic Insights Into Proton and Oxygen Transport Through Ultrathin Amorphous Al 2 O 3 and Al 2 O 3 ‐SiO 2 Electrocatalyst Overlayers

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An Efficient Design of TaOx‐Based Memristor by Inserting an Ultrathin Al2O3 Layer with High Stability for Neuromorphic Computing and Logic Operation

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Unraveling the Highly Plastic Behavior of ALD‐Aluminum Oxide Encapsulations by Small‐Scale Tensile Testing

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Effect of Nb2O5 doping on low-temperature sintering of TiO2-Al2O3 ceramics

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Interface between Al 2 O 3 and 4H-SiC investigated by time-of-flight medium energy ion scattering

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Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta2O5-Al2O3 Films Grown on Silicon by Atomic Layer Deposition

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High-Interface-Quality Hf-Based Gate Stacks on Si0.5Ge0.5 Through Aluminum Capping

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In situ impedance matching in Nb/Nb 2 O 5 /PtIr memristive nanojunctions for ultra-fast neuromorphic operation

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Improved oxidation resistance of boron nitride nanotubes with protective alumina nano-coatings

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ALD Al2O3-Engineered Schottky Barrier Interface for Amorphous Indium–Zinc Oxide

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Electrical model of Ta2O5/TaOx RRAM device with current conduction beyond RESET phase

Jagath, A. L., Kumar, T. N., & Almurib, H. A. F. (2019) · IEEE International Nanoelectronics Conference · doi:10.1109/inec.2019.8853845 · Cited by 6

Improving resistance change with temperature and thermal stability in Fe3O4 films for high-temperature resistors

Fujiwara, K., Tsubota, S., & Tanaka, H. (2018) · Applied Physics Express · doi:10.7567/1882-0786/aaf285 · Cited by 6

Density functional theory study of oxygen vacancy defect diffusion properties in λ -Ta 2 O 5

Wu, X., Cui, N., Zhang, Q., Wang, W., Huang, Q., Hongsong, Z., & Xu, Q. (2020) · Japanese Journal of Applied Physics · doi:10.35848/1347-4065/abcc14 · Cited by 6

An aluminide coating deposited by pack cementation on 2:17-type SmCo magnets

Chen, Q., Kang, D., He, Y., Liu, J., Zhang, T., & Jiang, C. (2024) · Applied Surface Science · doi:10.1016/j.apsusc.2024.160753 · Cited by 5

Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD Method

Фадеев, А. В., & Rudenko, K. V. (2019) · Russian Microelectronics · doi:10.1134/s1063739719040048 · Cited by 5

Interface induced diffusion

Gurbán, S., Sulyok, A., Menyhard, M., Baradács, E., Parditka, B., Cserháti, C., Langer, G. A., & Erdélyi, Z. (2021) · Scientific Reports · doi:10.1038/s41598-021-88808-1 · Cited by 5

Annealing‐Free Ohmic Contacts to n‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlOx

Christis, M., Henning, A., Bartl, J. D., Zeidler, A., Rieger, B., Stutzmann, M., & Sharp, I. D. (2023) · Advanced Materials Interfaces · doi:10.1002/admi.202300758 · Cited by 5

Temperature-dependent plasticity in organic synaptic transistors for adaptive learning and data encryption

Gao, Y., Han, X.-E., Gao, X., Xue, F.-L., Chen, J.-R., Zhong, Y., Xu, J.-L., & Wang, S. (2025) · Materials & Design · doi:10.1016/j.matdes.2025.114152 · Cited by 6

Degradation of leakage currents and reliability prediction for tantalum capacitors

Teverovsky, A. (2016) · Annual Reliability and Maintainability Symposium (RAMS) · doi:10.1109/rams.2016.7447969 · Cited by 5

In situ Al2O3 atomic layer deposition on pristine (0 0 1) GaAs: interface chemistry and its implication on charge carrier recombination and Fermi level pinning

Demarina, N. V., Karimzadah, S., Bennemann, B., Krause, C., Jalil, A. R., Hartmann, H., Kardynal, B. E., Lepsa, M. I., & Gruetzmacher, D. A. (2025) · Applied Surface Science · doi:10.1016/j.apsusc.2025.165114 · Cited by 4

Sodium-Controlled Interfacial Resistive Switching in Thin Film Niobium Oxide for Neuromorphic Applications

Gaggio, B., Jan, A., Muller, M., Salonikidou, B., Bakhit, B., Hellenbrand, M., Martino, G. D., Yildiz, B., & MacManus‐Driscoll, J. L. (2024) · Chemistry of Materials · doi:10.1021/acs.chemmater.4c00965 · Cited by 4

Investigation of effects of assisted ion bombardment on mechanical loss of sputtered tantala thin films for gravitational wave interferometers

Yang, L., Randel, E., Vajente, G., Ananyeva, A., Gustafson, E. K., Markosyan, A. S., Bassiri, R., Fejer, M. M., & Menoni, C. S. (2019) · Physical review. D/Physical review. D. · doi:10.1103/physrevd.100.122004 · Cited by 4

Efficient implementation of the Hodgkin-Huxley potassium channel via a single volatile memristor

Landsmeer, L. P. L., Hua, E., Abunahla, H., Siddiqi, M. A., Ishihara, R., Zeeuw, C. I. D., Hamdioui, S., & Strydis, C. (2025) · Frontiers in Neuroscience · doi:10.3389/fnins.2025.1569397 · Cited by 3

Molecularly modified ultrathin Al 2 O 3 layers as proton-conductive, oxygen-impermeable nanomembranes for catalytic surfaces

Leon-Chaparro, D., Englezos, C., Mei, B., Mul, G., & Katsoukis, G. (2026) · Nanoscale · doi:10.1039/d5nr04262c · Cited by 3

Oxidation behavior and interdiffusion of Ta Al multilayer films and Inconel 617 alloy

Ke, Y.-E., Chang, L.-C., Kai, W., & Chen, Y.-I. (2020) · Surface and Coatings Technology · doi:10.1016/j.surfcoat.2020.126684 · Cited by 3

Bipolar resistive switching memory with bismuth sulfide quantum dots

Rohilla, R., Goswami, L., Bisht, A., Maurya, V. K., Srivastava, R., & Kumar, A. (2025) · Journal of Applied Physics · doi:10.1063/5.0246454 · Cited by 3

Interface-enhanced ion migration in amorphous alumina thin film on a substrate

Liu, Z., Kwan, C. C. F., & Wen, J. Z. (2025) · Physical Review Materials · doi:10.1103/dspr-7h6w · Cited by 2

Bilayer Ohmic Electrode Engineering in TaO X ReRAM Devices

Paul, G., Glint, T., Menzel, S., & Rana, V. (2025) · IEEE Electron Device Letters · doi:10.1109/led.2025.3585469 · Cited by 2

Atomistic Insights into Structures and Dynamic Properties for Amorphous Aluminum/Lithium Alloys and Oxides

Xiong, J., Zhang, M., Guo, N., Bao, L., Hou, H., & Wang, B. (2025) · Aerospace · doi:10.3390/aerospace12121041 · Cited by 2

Cation‐Driven Valence Change Mechanism in 2D AgCrS 2 for Ultralow‐Power and Reliable Memristors

Su, Y., Wang, M., Tai, X., Liu, Y., Lin, Y. I. P., Guo, Y., Peng, J., Xie, Y., & Wu, C. (2026) · Advanced Science · doi:10.1002/advs.202521409 · Cited by 2

Oxygen Diffusion in Li(Nb,Ta)O3 Single Crystals

Kofahl, C., Uhlendorf, J., Muscutt, B., Pionteck, M. N., Sanna, S., Fritze, H., Ganschow, S., & Schmidt, H. (2024) · physica status solidi (a) · doi:10.1002/pssa.202300959 · Cited by 5

Diffusion of Oxygen in Near-Stoichiometric α-Nb2O5

Chen, W. K., & Jackson, R. A. (1967) · The Journal of Chemical Physics · doi:10.1063/1.1711999 · Cited by 31

Diffusion de l'oxyge`ne dans les oxydes de transition. II. Autodiffusion de l'oxyge`ne dans Nb28O70−x, sous oxyde le plus proche de la stoechiome´trie de Nb2O5

Massiani, Y., Crousier, J.-P., & Streiff, R. (1978) · Journal of Solid State Chemistry · doi:10.1016/s0022-4596(78)90186-x · Cited by 1

Self-Diffusion of Oxygen in Single Crystal and Polycrystalline Aluminum Oxide

Oishi, Y., & KINGERY, W. D. (1960) · The Journal of Chemical Physics · doi:10.1063/1.1731170 · Cited by 515

Diffusive oxygen ion transport in Li(Nb,Ta)O3 single crystals with congruent and near-stoichiometric composition

Dörrer, L., Uhlendorf, J., Kofahl, C., Tichy‐Rács, É., Suhak, Y., Fritze, H., Ganschow, S., & Schmidt, H. (2026) · Solid State Ionics · doi:10.1016/j.ssi.2026.117322