The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors
Abstract
The field effect transistors (FETs) based on thin layer MoS2 often have large hysteresis and unstable threshold voltage in their transfer curves, mainly due to the charge trapping at the oxide-semiconductor interface. In this paper, the charge trapping and de-trapping processes at the SiO2-MoS2 interface are studied. The trapping charge density and time constant at different temperatures are extracted. Making use of the trapped charges, the threshold voltage of the MoS2 based metal-oxide-semiconductor FETs is adjusted from 4 V to −45 V. Furthermore, the impact of the trapped charges on the carrier transport is evaluated. The trapped charges are suggested to give rise to the unscreened Coulomb scattering and/or the variable range hopping in the carrier transport of the MoS2 sheet.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Roy, K., Padmanabhan, M., Goswami, S., Sai, T. P., Ramalingam, G., Raghavan, S., & Ghosh, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.206 · Cited by 1,436
Cited by
Insulators for 2D nanoelectronics: the gap to bridge
Illarionov, Y. Y., Knobloch, T., Jech, M., Lanza, M., Akinwande, D., Vexler, M. I., Mueller, T., Lemme, M. C., Fiori, G., Schwierz, F., et al. (2020) · Nature Communications · doi:10.1038/s41467-020-16640-8 · Cited by 552
MoS2-Based Optoelectronic Gas Sensor with Sub-parts-per-billion Limit of NO2 Gas Detection
Pham, T., Li, G., Bekyarova, E., Itkis, M. E., & Mulchandani, A. (2019) · ACS Nano · doi:10.1021/acsnano.8b08778 · Cited by 536
Hybrid nanostructures of metal/two-dimensional nanomaterials for plasmon-enhanced applications
Li, X., Zhu, J., & Wei, B. (2016) · Chem. Soc. Rev. · doi:10.1039/c6cs00195e · Cited by 400
He, H., Yang, R., Zhou, W., Huang, H., Xiong, J., Gan, L., Zhai, T., & Guo, X. (2018) · Small · doi:10.1002/smll.201800079 · Cited by 312
Arnold, A. J., Razavieh, A., Nasr, J. R., Schulman, D. S., Eichfeld, C. M., & Das, S. (2017) · ACS Nano · doi:10.1021/acsnano.7b00113 · Cited by 265
Metadata
- Authors
- Guo, Y., Wei, X., Shu, J., Liu, B., Yin, J., Guan, C., Han, Y., Gao, S., & Chen, Q.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2015-03-09
- Volume
- 106
- Issue
- 10
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2026386847
- Cited by
- 285
- References
- 3
- FWCI
- 8.79
- Type
- journal article
- Language
- en
- Open access
- closed
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- Guo, Y., Wei, X., Shu, J., Liu, B., Yin, J., Guan, C., Han, Y., Gao, S., & Chen, Q. (2015). Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors. Applied Physics Letters. https://doi.org/10.1063/1.4914968
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