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Cited by 536

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MoS2-Based Optoelectronic Gas Sensor with Sub-parts-per-billion Limit of NO2 Gas Detection

Pham, Tung, Li, Guanghui, Bekyarova, Elena, Itkis, Mikhail E., Mulchandani, Ashok·2019·ACS Nano

Abstract

Red light illumination with photon energy matching the direct band gap of chemical vapor deposition grown single-layer MoS 2 with Au metal electrodes was used to induce a photocurrent which was employed instead of dark current for NO 2 gas sensing. The resulting Au/MoS 2 /Au optoelectronic gas sensor showed a significant enhancement of the device sensitivity S toward ppb level of NO 2 gas exposure reaching S = 4.9%/ppb (4900%/ppm), where S is a slope of dependence of relative change of the sensor resistance on NO 2 concentration. Further optimization of the MoS 2 -based optoelectronic gas sensor by using graphene (Gr) with a work function lower than that of Au for the electrical contacts to the MoS 2 channel allowed an increase of photocurrent. The limit of detection of NO 2 gas at the level of 0.1 ppb was obtained for the MoS 2 channel with graphene electrodes coated by Au. This value was calculated using experimentally obtained sensitivity and noise values and exceeds the U.S. Environment Protection Agency requirement for NO 2 gas detection at ppb level.

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Metadata

Authors
Pham, T., Li, G., Bekyarova, E., Itkis, M. E., & Mulchandani, A.
Venue
ACS Nano
Published
2019-02-20
Volume
13
Issue
3
Pages
3196-3205
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2916829776
Cited by
536
References
57
FWCI
21.85
Type
journal article
Language
en
Open access
closed

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Pham, T., Li, G., Bekyarova, E., Itkis, M. E., & Mulchandani, A. (2019). MoS2-Based Optoelectronic Gas Sensor with Sub-parts-per-billion Limit of NO2 Gas Detection. ACS Nano. https://doi.org/10.1021/acsnano.8b08778

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