The DOI matches its Crossref record; 74 of the 74 references it cites were found in a registry or an index.
Understanding chemical and physical mechanisms in atomic layer deposition
Open accessAbstract
Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the deposition of thin films. However, several physical and chemical phenomena can occur which cause deviation from “ideal” film growth during ALD. Understanding the underlying mechanisms that cause these deviations is important to achieving even better control over the growth of the deposited material. Herein, we review several precursor chemisorption mechanisms and the effect of chemisorption on ALD growth. We then follow with a discussion on diffusion and its impact on film growth during ALD. Together, these two fundamental processes of chemisorption and diffusion underlie the majority of mechanisms which contribute to material growth during a given ALD process, and the recognition of their role allows for more rational design of ALD parameters.
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Cites
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Cited by
Molecular Dynamics of Atomic Layer Deposition: Sticking Coefficient Investigation
Kunene, T. J., Tartibu, L. K., Karimzadeh, S., Oviroh, P. O., Ukoba, K., & Jen, T.-C. (2022) · Applied Sciences · doi:10.3390/app12042188 · Cited by 24
Metadata
- Authors
- Richey, N. E., de Paula, C., & Bent, S. F.
- Venue
- The Journal of Chemical Physics
- Publisher
- AIP Publishing
- Published
- 2020-01-22
- Volume
- 152
- Issue
- 4
- Pages
- 040902-040902
- ISSN
- 0021-9606 (ISSN-L)
- 1089-7690
- OpenAlex
- W3001010696
- Cited by
- 283
- References
- 74
- FWCI
- 12.07
- Type
- journal article
- Language
- en
- Open access
- hybrid
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