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A brief review of atomic layer deposition: from fundamentals to applications

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Johnson, Richard W., Hultqvist, Adam, Bent, Stacey F.·2014·Materials Today

Abstract

Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional conformality on high-aspect ratio structures, thickness control at the Angstrom level, and tunable film composition. With these advantages, ALD has emerged as a powerful tool for many industrial and research applications. In this review, we provide a brief introduction to ALD and highlight select applications, including Cu(In,Ga)Se 2 solar cell devices, high-k transistors, and solid oxide fuel cells. These examples are chosen to illustrate the variety of technologies that are impacted by ALD, the range of materials that ALD can deposit – from metal oxides such as Zn 1− x Sn x O y , ZrO 2 , Y 2 O 3 , to noble metals such as Pt – and the way in which the unique features of ALD can enable new levels of performance and deeper fundamental understanding to be achieved.

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Metadata

Authors
Johnson, R. W., Hultqvist, A., & Bent, S. F.
Venue
Materials Today
Publisher
Elsevier BV
Published
2014-06
Volume
17
Issue
5
Pages
236-246
ISSN
1369-7021 (ISSN-L)
OpenAlex
W2023603575
Cited by
1,996
References
0
FWCI
43.33
Type
journal article
Language
en
Open access
hybrid

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Johnson, R. W., Hultqvist, A., & Bent, S. F. (2014). A brief review of atomic layer deposition: from fundamentals to applications. Materials Today. https://doi.org/10.1016/j.mattod.2014.04.026

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