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Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices
Abstract
InAs/GaAs superlattices with ultra-thin InAs (few monolayer) were grown on GaAs substrates. Nucleation of InAs occurs in a two-dimensional or a three-dimensional way depending on the growth conditions. The physical properties: x ray, transmission electron microscopy, and photoluminescence were used to characterize the different growth processes.
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Cited by
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Metadata
- Authors
- Goldstein, L., Glas, F., Marzin, J. Y., Charasse, M. N., & Le Roux, G.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1985-11-15
- Volume
- 47
- Issue
- 10
- Pages
- 1099-1101
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1986442312
- Cited by
- 921
- References
- 0
- FWCI
- 2.62
- Type
- journal article
- Language
- en
- Open access
- closed
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- Goldstein, L., Glas, F., Marzin, J. Y., Charasse, M. N., & Le Roux, G. (1985). Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices. Applied Physics Letters. https://doi.org/10.1063/1.96342
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