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Carrier lifetime versus ion-implantation dose in silicon on sapphire
Abstract
We have measured the dependence of the free-carrier lifetime on O+ ion-implantation dose in silicon-on-sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm−2 the measured carrier lifetime reached a limit of 600 fs.
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Citations
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Metadata
- Authors
- Doany, F. E., Grischkowsky, D., & Chi, C.-C.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1987-02-23
- Volume
- 50
- Issue
- 8
- Pages
- 460-462
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1991991568
- Cited by
- 213
- References
- 0
- FWCI
- 11.76
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Carrier lifetime versus ion-implantation dose in silicon on sapphire. https://app.cochat.ai/papers/10.1063/1.98173
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- Doany, F. E., Grischkowsky, D., & Chi, C.-C. (1987). Carrier lifetime versus ion-implantation dose in silicon on sapphire. Applied Physics Letters. https://doi.org/10.1063/1.98173
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
