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Extreme selectivity in the lift-off of epitaxial GaAs films
Abstract
We have discovered conditions for the selective lift-off of large area epitaxial AlxGa1−xAs films from the substrate wafers on which they were grown. A 500-Å-thick AlAs release layer is selectivity etched away, leaving behind a high-quality epilayer and a reusable GaAs substrate. We have measured a selectivity of ≳107 between the release layer and Al0.4Ga0.6As. This process relies upon the creation of a favorable geometry for the outdiffusion of dissolved H2 gas from the etching zone.
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Cited by
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Metadata
- Authors
- Yablonovitch, E., Gmitter, T., Harbison, J. P., & Bhat, R.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1987-12-28
- Volume
- 51
- Issue
- 26
- Pages
- 2222-2224
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2042750269
- Cited by
- 817
- References
- 0
- FWCI
- 20.96
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Extreme selectivity in the lift-off of epitaxial GaAs films. https://app.cochat.ai/papers/10.1063/1.98946
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- Yablonovitch, E., Gmitter, T., Harbison, J. P., & Bhat, R. (1987). Extreme selectivity in the lift-off of epitaxial GaAs films. Applied Physics Letters. https://doi.org/10.1063/1.98946
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