The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Gate-tunable carbon nanotube–MoS 2 heterojunction p-n diode
Open accessAbstract
Significance: The p-n junction diode is the most ubiquitous and fundamental building block of modern electronics, with far-reaching applications including integrated circuits, detectors, photovoltaics, and lasers. With the recent discovery and study of atomically thin materials, opportunities exist for adding new functionality to the p-n junction diode. Here we demonstrate that a p-n heterojunction diode based on atomically thin MoS 2 and sorted semiconducting carbon nanotubes yields unprecedented gate tunability in both its electrical and optical properties, which is not observed in the case of bulk semiconductor devices. In addition to enabling advanced electronic and optoelectronic technologies, this p-n heterojunction diode provides new insight into charge transport and separation at atomically thin heterointerfaces.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Self-citationPhotovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
Furchi, M. M., Pospischil, A., Libisch, F., Burgdörfer, J., & Mueller, T. (2014) · Nano Letters · doi:10.1021/nl501962c · Cited by 1,085
Electronic Transport in Two-Dimensional Materials
Sangwan, V. K., & Hersam, M. C. (2018) · Annual Review of Physical Chemistry · doi:10.1146/annurev-physchem-050317-021353 · Cited by 336
Self-citationAtomically thin p–n junctions based on two-dimensional materials
Frisenda, R., Molina-Mendoza, A. J., Mueller, T., Castellanos-Gomez, A., & van der Zant, H. S. J. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00880e · Cited by 312
Ryder, C. R., Wood, J. D., Wells, S. A., & Hersam, M. C. (2016) · ACS Nano · doi:10.1021/acsnano.6b01091 · Cited by 283
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Metadata
- Authors
- Jariwala, D., Sangwan, V. K., Wu, C.-C., Prabhumirashi, P. L., Geier, M. L., Marks, T. J., Lauhon, L. J., & Hersam, M. C.
- Venue
- Proceedings of the National Academy of Sciences
- Published
- 2013-10-21
- Volume
- 110
- Issue
- 45
- Pages
- 18076-18080
- ISSN
- 0027-8424 (ISSN-L)
- 1091-6490
- OpenAlex
- W2078536002
- Cited by
- 436
- References
- 1
- FWCI
- 15.24
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Jariwala, D., Sangwan, V. K., Wu, C.-C., Prabhumirashi, P. L., Geier, M. L., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2013). Gate-tunable carbon nanotube–MoS 2 heterojunction p-n diode. Proceedings of the National Academy of Sciences. https://doi.org/10.1073/pnas.1317226110
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