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Metal-insulator transitions

Mott, N. F.·1973·Contemporary Physics

Abstract

The valence and conduction bands in semi-conductors normally owe their properties to their crystal structures. Sometimes changes in pressure or composition in mixed crystals can lead to an overlap between these bands, which results in a transition to metallic behaviour. Repulsion between electrons can also lead to the formation of two bands, which may or may not overlap; again metal-insulator transitions can occur. The most important and controversial question about these transitions is whether they are accompanied by a discontinuous change in the density of current carriers; the evidence for and against this is described. Applications are to vanadium trioxide and highly doped silicon and germanium.

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Metadata

Authors
Mott, N. F.
Venue
Contemporary Physics
Published
1973-09
Volume
14
Issue
5
Pages
401-413
ISSN
  • 0010-7514 (ISSN-L)
  • 1366-5812
OpenAlex
W3023409061
Cited by
981
References
0
FWCI
11.39
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Metal-insulator transitions. https://app.cochat.ai/papers/10.1080/00107517308210764
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Mott, N. F. (1973). Metal-insulator transitions. Contemporary Physics. https://doi.org/10.1080/00107517308210764

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