Cited by 8Ferroelectric and Piezoelectric MaterialsMultiferroics and related materialsMicrowave Dielectric Ceramics Synthesis

Influence of Crystallization Process on Structural State of CSD BST Thin Films

Zhigalina, O. M., Vorotilov, K. A., Sigov, A. S., Kumskov, A. S.·2006·Ferroelectrics

Abstract

The effect of a thin seeding layer (about 30 nm) on crystallization behavior of CSD BST film is studied. The seeding layer is prepared from alkoxide precursor and annealed at different temperatures. The main BST film is deposited from alkoxide solution modified by 2-ethylhexanoic acid. It is shown that the increase of annealing temperature of the seeding layer from 500 to 700°C changes crystalline structure of upper deposited layer from a randomly oriented polycrystalline to an oriented columnar grain.

Integrity signals

Registry

Crossref · 10.1080/00150190600689159

Cites

Statistics

Recomputing p-values needs the paper’s full text.

Claims the paper makes

This paper’s full text isn’t openly available, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

  • The main strategy of columnar grain growth in CSD films is a choice of the substrate with a close lattice constant or introducing an intermediate seeding layer whose structure decreases the Gibbs free energy ΔGv at the interface.

    “For this reason, the main strategy of columnar grain growth in CSD films is a choice of the substrate with a close lattice constant or introducing an intermediate seeding layer whose structure decreases the Gibbs free energy ΔGv at the interface [32,46,47].”

    From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [47]

Cited by

Sorted by citations

Authors
Zhigalina, O. M., Vorotilov, K. A., Sigov, A. S., & Kumskov, A. S.
Affiliations
  • Russian Academy of Sciences (RU)
  • MIREA - Russian Technological University (RU)
Venue
Ferroelectrics
Published
2006-07
Volume
335
Issue
1
Pages
13-21
ISSN
  • 0015-0193 (ISSN-L)
  • 1563-5112
OpenAlex
W2035139461
Cited by
8
References
0
Citations by year
2023: 1 · 2021: 1 · 2017: 1 · 2016: 1 · 2012: 1
FWCI
0.66
Type
journal article
Language
en
Open access
closed
Locations
Ferroelectrics (publishedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
  • Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Microwave Dielectric Ceramics Synthesis
Keywords
barium strontium titanate, crystallization, seed layer, annealing temperature, alkoxide precursors, 2-ethylhexanoic acid, columnar grains, grain orientation, ferroelectric thin films

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review