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Cited by 249

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Temperature-dependent thermal conductivity of porous silicon

Open access
Gesele, G, Linsmeier, J, Drach, V, Fricke, J, Arens-Fischer, R·1997·Journal of Physics D: Applied Physics

Abstract

The thermal conductivity of electrochemically etched porous silicon (PS) layers was determined over a wide temperature range (T = 35 - 320 K) using the dynamic technique. Both the doping level of the silicon wafers (p and ) and the porosity P of the porous layers (P = 64 - 89%) were varied. The measured thermal conductivities were three to five orders of magnitude smaller than the values for bulk silicon. Furthermore, they increase with increasing the wafer doping level and with decreasing the porosity P of the layers. For all investigated PS layers the thermal conductivity increases with temperature. The results are discussed in terms of a simple model for heat conduction in PS based on the phonon diffusion model.

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Crossref · 10.1088/0022-3727/30/21/001

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Metadata

Authors
Gesele, G., Linsmeier, J., Drach, V, Fricke, J., & Arens-Fischer, R.
Venue
Journal of Physics D: Applied Physics
Published
1997-11-07
Volume
30
Issue
21
Pages
2911-2916
ISSN
  • 0022-3727 (ISSN-L)
  • 1361-6463
OpenAlex
W2053187018
Cited by
249
References
1
FWCI
7.19
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Temperature-dependent thermal conductivity of porous silicon. https://app.cochat.ai/papers/10.1088/0022-3727/30/21/001
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Gesele, G., Linsmeier, J., Drach, V, Fricke, J., & Arens-Fischer, R. (1997). Temperature-dependent thermal conductivity of porous silicon. Journal of Physics D: Applied Physics. https://doi.org/10.1088/0022-3727/30/21/001

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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