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Temperature-dependent thermal conductivity of porous silicon
Open accessAbstract
The thermal conductivity of electrochemically etched porous silicon (PS) layers was determined over a wide temperature range (T = 35 - 320 K) using the dynamic technique. Both the doping level of the silicon wafers (p and ) and the porosity P of the porous layers (P = 64 - 89%) were varied. The measured thermal conductivities were three to five orders of magnitude smaller than the values for bulk silicon. Furthermore, they increase with increasing the wafer doping level and with decreasing the porosity P of the layers. For all investigated PS layers the thermal conductivity increases with temperature. The results are discussed in terms of a simple model for heat conduction in PS based on the phonon diffusion model.
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Cites
Thermal conductivity measurement from 30 to 750 K: the 3ω method
Cahill, D. G. (1990) · Review of Scientific Instruments · doi:10.1063/1.1141498 · Cited by 1,928
Cited by
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Apostolopoulou‐Kalkavoura, V., Munier, P., & Bergström, L. (2021) · Advanced Materials · doi:10.1002/adma.202001839 · Cited by 394
Nanoporous Si as an Efficient Thermoelectric Material
Lee, J.-H., Galli, G. A., & Grossman, J. C. (2008) · Nano Letters · doi:10.1021/nl802045f · Cited by 296
Metadata
- Authors
- Gesele, G., Linsmeier, J., Drach, V, Fricke, J., & Arens-Fischer, R.
- Venue
- Journal of Physics D: Applied Physics
- Publisher
- IOP Publishing
- Published
- 1997-11-07
- Volume
- 30
- Issue
- 21
- Pages
- 2911-2916
- ISSN
- 0022-3727 (ISSN-L)
- 1361-6463
- OpenAlex
- W2053187018
- Cited by
- 249
- References
- 1
- FWCI
- 7.19
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Gesele, G., Linsmeier, J., Drach, V, Fricke, J., & Arens-Fischer, R. (1997). Temperature-dependent thermal conductivity of porous silicon. Journal of Physics D: Applied Physics. https://doi.org/10.1088/0022-3727/30/21/001
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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